BLF522 Philips Semiconductors, BLF522 Datasheet - Page 6

• Manufacturer Part Number: BLF522
• Description: UHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in a common source class-B circuit.
Ruggedness in class-B operation
The BLF522 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
V
September 1992
handbook, halfpage
CW, class-B
h
DS
UHF power MOS transistor
= 25 C; R
Class-B operation; V
f = 500 MHz.
Fig.9
= 15.5 V; f = 500 MHz at rated output power.
MODE OF OPERATION
(dB)
G P
20
16
12
8
4
0
3
Power gain and efficiency as functions of
load power, typical values.
th mb-h
DS
4
= 0.4 K/W, unless otherwise specified.
= 12.5 V; I
5
DQ
= 50 mA;
G P
(MHz)
6
500
f
P L (W)
MRA247
7
100
80
60
40
20
0
(%)
12.5
V
(V)
DS
6
handbook, halfpage
Class-B operation; V
f = 500 MHz.
Fig.10 Load power as a function of input power,
(mA)
I
(W)
50
P L
DQ
10
8
6
4
2
0
0
typical values.
0.4
DS
(W)
P
5
= 12.5 V; I
L
0.8
DQ
= 50 mA;
typ. 11
(dB)
G
10
p
Product specification
1.2
P IN (W)
BLF522
MRA252
typ. 55
1.6
(%)
50
D