3SK252 NEC, 3SK252 Datasheet

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3SK252

Manufacturer Part Number
3SK252
Description
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
3SK252
Manufacturer:
NEC
Quantity:
20 000
Part Number:
3SK252-T2
Manufacturer:
NEC
Quantity:
3 000
Document No. P10582EJ2V0DS00 (2nd edition)
(Previous No. TD-2373)
Date Published August 1995 P
Printed in Japan
FEATURES
• Low V
• Driving Battery
• Low Noise Figure :
• High Power Gain :
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting :
• Package
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
PRECAUTION:
or fields.
*1: R
*2: Free air
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
L
DD
Use
10 k
:
(V
NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
G
PS
DS
:
= 19.0 dB TYP. (f = 470 MHz)
= 3.5 V)
Embossed Type Taping
4 Pins Mini Mold
RF AMPLIFIER FOR CATV TUNER
V
V
V
V
V
I
P
T
T
D
ch
stg
DSX
G1S
G2S
G1D
G2D
D
–55 to +125
DATA SHEET
4 PINS MINI MOLD
A
200
125
18
18
18
25
8
8
= 25 C)
*1
*1
*2
MOS FIELD EFFECT TRANSISTOR
mW
mA
V
V
V
V
V
C
C
PACKAGE DIMENSIONS
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
(Unit: mm)
2.8
1.5
3SK252
+
+
0.2
0.3
0.2
0.1
©
1993

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3SK252 Summary of contents

Page 1

... DSX * G1S * G2S G1D G2D 200 125 –55 to +125 C stg 3SK252 PACKAGE DIMENSIONS (Unit: mm) + 0.2 2.8 – 0.3 + 0.2 1.5 – 0.1 5˚ 5˚ 5˚ 5˚ PIN CONNECTIONS 1. Source 2. Drain 3. Gate2 4. Gate1 © 1993 ...

Page 2

... DS 0.9 1.2 1 MHz 0. 470 MHz 2 0.8 2 MHz 3SK252 TEST CONDITIONS = V = – G2S 0.75 V G2S G1S = G2S G1S G2S G1S = G1S G2S ...

Page 3

... V G1S INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE G2S 4 MHz = 3.5 V 3.0 3.0 V 2.0 2 –1 G2S 3SK252 V = 1.6 V G1S 1.4 V 1.2 V 1.0 V 0 – Drain to Source Voltage – 3.5 V G2S 3.0 V 2.0 V 2.5 V 1.0 V 1.5 V 1.0 1.5 2.0 2.5 – Gate1 to Source Voltage – V 1.0 2.0 3.0 4.0 – Gate2 to Source Voltage – V ...

Page 4

... MHz 1.5 1.0 0.5 0 –1.0 0 1.0 2.0 3.0 V – Gate2 to Source Voltage – V G2S 4 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 3 3 3.0 V) G2S f = 470 MHz –10 –20 0 4.0 –1 G2S 3SK252 1.0 2.0 3.0 4.0 – Gate2 to Source Voltage – V ...

Page 5

... NF TEST CIRCUIT MHz 1 500 INPUT 3 OUTPUT 000 000 1.2 mm U.E 1.2 mm U.E REC 2 G2S DS RFC 2.2 k Ferrite Beads 1 500 pF 1 000 3 000 pF V G1S 3SK252 OUTPUT 50 5 ...

Page 6

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2 3SK252 M4 94.11 ...

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