SLD-1000 Sirenza Microdevices, SLD-1000 Datasheet - Page 2

• Manufacturer Part Number: SLD-1000
• Description: 4 Watt Discrete LDMOS FET
• Manufacturer: Sirenza Microdevices

Contact Description
Quality Specifications
Absolute Maximum Ratings
303 S. Technology Court
Broomfield, CO 80021
Pad Diagram
Drain Voltage (V
Gate Voltage (V
RF Input Power
Load Impedance for Continuous Operation
Without Damage
Output Device Channel Temperature
Storage Temperature Range
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation see typical
setup values specified in the table on page one.
Pad #
1
2
3
Pad #1
Manifold
Gate
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
ESD Rating
Parameter
MTTF
Function
GS
Source
DS
ESD
Protection
Drain
Gate
Parameters
), V
)
DS
Pad #3
Backside Source = Ground
=0
Aluminum metallized manifold MOSFET Gate with ESD protection structure. (Topside contact)
Aluminum metallized manifold MOSFET Drain. (Topside contact)
Chrome Gold metallized MOSFET Source contact. Appropriate electrical, mechanical and thermal connection required for
proper operation.
Description
Human Body Model
200
o
C Channel
Pad #2
Drain
Manifold
(Backside contact)
-40 to +150
Value
+200
10:1
+30
35
20
Phone: (800) SMI-MMIC
VSWR
Volts
Volts
dBm
Unit
ºC
ºC
SLD-1000 10-2700 MHz 4 Watt LDMOS FET - Bare Die
2
Note 1:
Gate voltage must be applied to to the device
concurrently or after application of drain voltage to
prevent potentially destructive oscillations. Bias voltages should
never be applied to the transistor unless it is properly termi-
nated on both input and output.
Note 2:
The required V
device to device due to the normal die-to-die variation in thresh-
old voltage with LDMOS transistors.
Note 3:
The threshold voltage (V
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature
Compensation.
Description
GS
corresponding to a specific I
GSTH
) of LDMOS transistors varies with
http://www.sirenza.com
EDS-104291 Rev C
DQ
Hours
will vary from
Volts
Unit
1.2 X 10
Typical
750
6