BFP280W Siemens Semiconductor Group, BFP280W Datasheet

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BFP280W

Manufacturer Part Number
BFP280W
Description
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
Manufacturer
Siemens Semiconductor Group
Datasheet
NPN Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low noise, low-power amplifiers in mobile
• f
Type
BFP 280W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
F = 1.5dB at 900MHz
S
T
S
= 7,5GHz
is measured on the collector lead at the soldering point to the pcb.
116 °C
Marking Ordering Code
REs
Q62702-F1504
1)
1
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = C
3 = E
- 65 ... + 150
- 65 ... + 150
Values
150
10
10
10
1.2
80
8
2
430
4 = B
BFP 280W
Package
SOT-343
Dec-12-1996
Unit
V
mA
mW
°C
K/W

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BFP280W Summary of contents

Page 1

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • 7,5GHz 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB Collector-emitter capacitance ...

Page 4

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA VAF = 25.609 1.6163 - VAR = 5.6909 1.0651 - RBM = 14.999 CJE = 36.218 ...

Page 5

Total power dissipation P * Package mounted on epoxy 100 tot Permissible Pulse Load thJS K ...

Page 6

Collector-base capacitance 1MHz 0.30 0.25 0.20 0.15 0.10 0.05 0. Power Gain ...

Page 7

Power Gain Parameter 19 I =3mA ...

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