PBSS4350SPN Philips Semiconductors, PBSS4350SPN Datasheet
PBSS4350SPN
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PBSS4350SPN Summary of contents
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... V, 2.7 A NPN/PNP low V Rev. 01 — 5 April 2007 www.datasheet4u.com 1. Product profile 1.1 General description NPN/PNP double low V power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS4350SPN 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High effi ...
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... TR2 base TR2 collector TR2 collector TR2 collector TR1 collector TR1 Ordering information Package Name Description SO8 plastic small outline package; 8 leads; body width 3.9 mm Marking codes Marking code 4350SPN Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Min Typ Max - - 2 [1] - ...
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... T amb total power dissipation T amb junction temperature ambient temperature storage temperature O , standard footprint Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Min Max - 2 0.5 [ 0.55 ...
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... Fig 1. Per device: Power derating curves PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V 2.5 P tot (W) (1) 2.0 1.5 (2) 1.0 (3) 0 standard footprint Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa967 125 175 amb © NXP B.V. 2007. All rights reserved ...
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... Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point thermal resistance from in free air junction to ambient O , standard footprint Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Min Typ Max [ 227 [ 144 [ ...
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... Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa810 (s) p 006aaa811 (s) p © ...
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... 100 mA; Bon rise time I = 100 mA Boff turn-on time storage time fall time turn-off time collector capacitance MHz Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Min Typ = 300 520 [1] 300 500 ...
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... 100 mA; Bon rise time I = 100 mA Boff turn-on time storage time fall time turn-off time collector capacitance MHz 300 s; 0.02. p Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Min Typ = 100 mA ...
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... Fig 6. TR1 (NPN): Collector current as a function of 006aaa970 1.4 V BEsat (V) 1.0 0.6 0 (mA) C (1) T (2) T (3) T Fig 8. TR1 (NPN): Base-emitter saturation voltage as a Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa969 5 I (mA) = 100 ...
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... Fig 10. TR1 (NPN): Collector-emitter saturation voltage 006aaa974 10 R CEsat ( ) 10 (1) (2) ( (mA) C (1) I (2) I (3) I Fig 12. TR1 (NPN): Collector-emitter saturation Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa973 1 1 (1) ( amb /I = 100 C B ...
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... Fig 14. TR2 (PNP): Collector current as a function of 006aaa979 1.4 V BEsat (V) 1.0 0.6 0 (mA) C (1) T (2) T (3) T Fig 16. TR2 (PNP): Base-emitter saturation voltage as a Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa978 5 I (mA) = 140 B 126 112 0.4 0.8 1.2 1 ...
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... Fig 18. TR2 (PNP): Collector-emitter saturation voltage 006aaa983 10 R CEsat ( ) 10 10 (1) (2) ( (mA) C (1) I (2) I (3) I Fig 20. TR2 (PNP): Collector-emitter saturation Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 006aaa982 1 1 (1) ( amb /I = 100 C ...
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... (probe) oscilloscope 450 100 mA Bon Boff Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform off ...
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... (probe) oscilloscope 450 100 mA Bon Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform off ...
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... For further information and the availability of packing methods, see PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V 5.0 4.8 6.2 4.0 5.8 3.8 pin 1 index 1.27 Dimensions in mm Packing methods Package Description SOT96 pitch tape and reel Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 1.75 1.0 0.4 0.49 0.25 0.36 0.19 03-02-18 [1] Packing quantity 1000 2500 -115 -118 Section 14. ...
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... Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat 1.30 4.00 6.60 7.00 1. Dimensions in mm enlarged solder land 1.30 4.00 6.60 7.00 Dimensions in mm © NXP B.V. 2007. All rights reserved. sot096-1_fr sot096-1_fw ...
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... Revision history www.datasheet4u.com Table 10. Revision history Document ID Release date PBSS4350SPN_1 20070405 PBSS4350SPN_1 Product data sheet 50 V, 2.7 A NPN/PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat Supersedes - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 5 April 2007 PBSS4350SPN (BISS) transistor CEsat © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PBSS4350SPN_1 (BISS) transistor All rights reserved. Date of release: 5 April 2007 ...