BU808DFX STMicroelectronics, BU808DFX Datasheet

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... LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 APPLICATIONS COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END INCHES. DESCRIPTION The BU808DFX is a NPN transistor in monolithic Darlington configuration manufactured using Multiepitaxial Mesa technology for cost-effective high performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter ...

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... BU808DFX THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time s t Fall Time ...

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... Derating Curve Collector Emitter Saturation Voltage Power Losses at 16 KHz www.DataSheet4U.com DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load at 16KHz BU808DFX 3/7 ...

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... BU808DFX Switching Time Inductive Load at 16KHZ BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current I has to be provided for the lowest gain 100 C (line scan phase). On the other hand, negative base current I must be provided to B2 turn off the power transistor (retrace phase) ...

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... Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit www.DataSheet4U.com BU808DFX 5/7 ...

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... BU808DFX ISOWATT218FX MECHANICAL DATA DIM. MIN. A 5.30 C 2.80 D 3.10 D1 1.80 E 0.80 F 0.65 F2 1.80 G 10. 15. 22.80 L3 26.30 L4 43.20 L5 4.30 L6 24.30 L7 14.60 N 1.80 R 3.80 Dia 3.40 6/7 www.DataSheet4U.com mm. TYP MAX. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 5.45 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80 7627132 B ...

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