UNR2121 Panasonic Semiconductor, UNR2121 Datasheet

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UNR2121

Manufacturer Part Number
UNR2121
Description
Silicon PNP epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
Transistors with built-in Resistor
UNR212x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
• UNR2121 (UN2121)
• UNR2122 (UN2122)
• UNR2123 (UN2123)
• UNR2124 (UN2124)
• UNR212X (UN212X)
• UNR212Y (UN212Y)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR2122/212X/212Y
(Collector open) UNR2123/2124
Forward current UNR2121
transfer ratio
reduction of the number of parts.
packing and magazine packing
Parameter
Parameter
UNR212X
UNR212X
UNR2121
UNR2122/212Y
UNR2123/2124
UNR212X
Marking Symbol (R
7A
7B
7C
7D
7I
7Y
Symbol
a
V
V
= 25°C ± 3°C
Symbol
0.27 kΩ
T
2.2 kΩ
4.7 kΩ
2.2 kΩ
3.1 kΩ
P
10 kΩ
I
T
V
CBO
CEO
V
a
I
I
I
C
stg
T
h
CBO
CEO
EBO
j
CBO
CEO
= 25°C
FE
1
)
−55 to +150
Rating
I
I
V
V
V
V
C
C
−500
−50
−50
200
150
Note) The part numbers in the parenthesis show conventional part number.
CB
CE
EB
CE
(UN212x Series)
= −10 µA, I
= −2 mA, I
2.2 kΩ
4.7 kΩ
4.6 kΩ
10 kΩ
10 kΩ
5 kΩ
SJH00008CED
(R
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
2
)
Conditions
Unit
mW
B
mA
C
°C
°C
E
V
V
C
E
B
= 0
= 0
= 0
= 0
= 0
= −5 mA
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
Min
−50
−50
B
0.40
3
40
50
60
20
2
+0.10
–0.05
R
R
1
2
Typ
Mini3-G1 Package
− 0.1
− 0.5
Max
−1.0
−1.0
−5
−2
−1
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
Unit
mA
µA
µA
V
V
1

Related parts for UNR2121

UNR2121 Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ Resistance by Part Number Marking Symbol (R • UNR2121 (UN2121) 7A • UNR2122 (UN2122) 7B • UNR2123 (UN2123) 7C • ...

Page 2

... UNR212x Series ■ Electrical Characteristics (continued) T Parameter Collector-emitter saturation voltage UNR212X/212Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR2121/2124 UNR2122 UNR2123 UNR212X UNR212Y Resistance ratio UNR2124 UNR212X UNR212Y Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. ...

Page 3

... Characteristics charts of UNR2121  −240 = 25° −200 = −1 −160 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0 −2 −4 −6 −8 −10 −12 0 Collector-emitter voltage V (V) CE  MHz = 25° ...

Page 4

UNR212x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2123 ...

Page 5

Characteristics charts of UNR2124  −300 = 25° −250 = −1 −200 − 0.9 mA − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA ...

Page 6

UNR212x Series  MHz = 25° −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR212Y  V ...

Page 7

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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