UNR2211 Panasonic Semiconductor, UNR2211 Datasheet

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UNR2211

Manufacturer Part Number
UNR2211
Description
Silicon NPN epitaxial planar transistor
Manufacturer
Panasonic Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
UNR221100L
Manufacturer:
HANSE
Quantity:
146
Part Number:
UNR221100L
Manufacturer:
PANASONIC
Quantity:
5 547
Part Number:
UNR221100L
Manufacturer:
PANASONIC
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Part Number:
UNR221100L
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Transistors with built-in Resistor
UNR221x Series
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
• UNR2210 (UN2210)
• UNR2211 (UN2211)
• UNR2212 (UN2212)
• UNR2213 (UN2213)
• UNR2214 (UN2214)
• UNR2215 (UN2215)
• UNR2216 (UN2216)
• UNR2217 (UN2217)
• UNR2218 (UN2218)
• UNR2219 (UN2219)
• UNR221D (UN221D)
• UNR221E (UN221E)
• UNR221F (UN221F)
• UNR221K (UN221K)
• UNR221L (UN221L)
• UNR221M (UN221M)
• UNR221N (UN221N)
• UNR221T (UN221T)
• UNR221V (UN221V)
• UNR221Z (UN221Z)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts.
packing and magazine packing
Parameter
Marking Symbol (R
8L
8A
8B
8C
8D
8E
8F
8H
8I
8K
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
Symbol
V
V
0.51 kΩ
T
4.7 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
P
47 kΩ
22 kΩ
47 kΩ
10 kΩ
22 kΩ
I
T
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
CBO
CEO
a
1 kΩ
C
stg
T
j
= 25°C
1
)
−55 to +150
Rating
100
200
150
Note) The part numbers in the parenthesis show conventional part number.
50
50
(UN221x Series)
5.1 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
22 kΩ
SJH00010CED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
B
0.40
3
2
+0.10
–0.05
R
R
1
2
Mini3-G1 Package
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
1

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UNR2211 Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ Resistance by Part Number Marking Symbol (R • UNR2210 (UN2210) 8L • UNR2211 (UN2211) 8A • UNR2212 (UN2212) 8B • UNR2213 (UN2213) 8C • UNR2214 (UN2214) 8D • ...

Page 2

... Output voltage low-level UNR2213/221K UNR221D UNR221E Transition frequency Input resistance UNR2218 UNR2219 UNR221M/211V UNR2216/221F/221L/ 221N/221Z UNR2211/2214/2215/221K UNR2212/2217/221T UNR2210/2213/221D/221E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Rank classification Rank Q h 160 to 260 25°C ± 3°C ...

Page 3

... Electrical Characteristics (continued) T Parameter Resistance ratio UNR221M UNR221N UNR2218/2219 UNR221Z UNR2214 UNR221T UNR221F UNR221V UNR2211/2212/2213/221L UNR221K UNR221E UNR221D Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  250 200 ...

Page 4

... UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR2211  160 = 25° 1 0.9 mA 0.8 mA 0.7 mA 120 0.6 mA 0.5 mA 0 Collector-emitter voltage V ...

Page 5

Characteristics charts of UNR2212  160 = 25° 1 0.9 mA 0.7 mA 0.8 mA 120 0.6 mA 0 0 0.1 mA ...

Page 6

UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR2214  ...

Page 7

Characteristics charts of UNR2215  160 = 25° 1 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0 0 0.1 mA ...

Page 8

UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR2217  ...

Page 9

Characteristics charts of UNR2218  240 = 25° 200 = 1 0.9 mA 0.8 mA 160 0.7 mA 120 0 0.5 mA 0 0.2 mA ...

Page 10

UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR221D  ...

Page 11

Characteristics charts of UNR221E  1 25° 0 0 0.2 mA 0 0.5 mA 0.1 mA ...

Page 12

UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR221K  ...

Page 13

Characteristics charts of UNR221L  240 = 25° 200 160 = 1 0.8 mA 120 ...

Page 14

UNR221x Series  MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR221N  V ...

Page 15

Characteristics charts of UNR221T  160 = 25° 1 0.9 mA 120 0.8 mA 0.7 mA 0.6 mA 0 0 0.1 mA ...

Page 16

UNR221x Series  MHz = 25° 100 Collector-base voltage V (V) CB Characteristics charts of UNR221Z  V ...

Page 17

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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