UNR32AA Panasonic Semiconductor, UNR32AA Datasheet
UNR32AA
Manufacturer Part Number
UNR32AA
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.UNR32AA.pdf
(3 pages)
Transistors with built-in Resistor
UNR32AA
Silicon NPN epitaxial planar transistor
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
I
T
V
V
CBO
CEO
a
I
I
I
V
V
C
stg
1
CE(sat)
T
h
CBO
CEO
EBO
R
j
f
CBO
CEO
= 25°C
FE
OH
/ R
OL
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00079AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
B
E
E
mA
= 0
= 0
°C
°C
V
V
= 0
= 0.5 V, R
= 5 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
= 1 kΩ
L
= 1 kΩ
Marking Symbol: HL
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(100 kΩ)
−30%
3
0.80
1.20
1
0.75
Min
B
4.9
50
50
80
R
R
1
(0.40)
±0.05
±0.05
2
(100 kΩ)
2
Typ
100
150
1.0
SSSMini3-F1 Package
+30%
Max
0.25
1.25
0.1
0.5
0.1
0.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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UNR32AA Summary of contents
Page 1
... Transistors with built-in Resistor UNR32AA Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... UNR32AA 120 100 100 120 140 Ambient temperature T (°C) a 300 = 85° 250 25°C 200 −25°C 150 100 100 Collector current I (mA) C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...