UNR4210 Panasonic Semiconductor, UNR4210 Datasheet

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UNR4210

Manufacturer Part Number
UNR4210
Description
Silicon NPN epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
Transistors with built-in Resistor
UNR421x Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• New S type package, allowing supply with the radial taping
• UNR4210 (UN4210)
• UNR4211 (UN4211)
• UNR4212 (UN4212)
• UNR4213 (UN4213)
• UNR4214 (UN4214)
• UNR4215 (UN4215)
• UNR4216 (UN4216)
• UNR4217 (UN4217)
• UNR4218 (UN4218)
• UNR4219 (UN4219)
• UNR421D (UN421D)
• UNR421E (UN421E)
• UNR421F (UN421F)
• UNR421K (UN421K)
• UNR421L (UN421L)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts
Parameter
0.51 kΩ
4.7 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
1 kΩ
Symbol
(R
V
V
T
1
P
I
T
CBO
CEO
a
)
C
stg
T
j
= 25°C
−55 to +150
Rating
100
300
150
Note) The part numbers in the parenthesis show conventional part number.
50
50
(UN421x Series)
5.1 kΩ
4.7 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
SJH00020BED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
0.45
0.75 max.
+0.20
–0.10
B
1
(2.5) (2.5)
4.0
R
R
2
±0.2
1
2
3
2.0
±0.2
C
E
NS-B1 Package
0.7
1: Emitter
2: Collector
3: Base
0.45
±0.1
Unit: mm
+0.20
–0.10
1

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UNR4210 Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping ■ Resistance by Part Number • UNR4210 (UN4210) • UNR4211 (UN4211) • UNR4212 (UN4212) • UNR4213 (UN4213) • UNR4214 (UN4214) • ...

Page 2

... Output voltage low-level UNR4213/421K UNR421D UNR421E Transition frequency Input UNR4218 resistance UNR4219 UNR4216/421F/421L UNR4211/4214/4215/421K UNR4212/4217 UNR4210/4213/421D/421E Resistance UNR4218/4219 ratio UNR4214 UNR421F UNR4211/4212/4213/421L UNR421K UNR421E UNR421D Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Rank classification ...

Page 3

... Common characteristics chart  400 300 200 100 120 160 ( °C ) Ambient temperature T a Characteristics charts of UNR4210  1 25° 0 0 0.3 mA 0.6 mA 0 Collector-emitter voltage V ...

Page 4

UNR421x Series Characteristics charts of UNR4211  160 = 25° 1 0.9 mA 0.8 mA 0.7 mA 120 0.6 mA 0.5 mA 0 ...

Page 5

MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR4213  ...

Page 6

UNR421x Series Characteristics charts of UNR4214  160 = 25° 1 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0 0.2 mA ...

Page 7

MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR4216  ...

Page 8

UNR421x Series Characteristics charts of UNR4217  120 = 25° 0.9 mA 0.8 mA 100 0.7 mA 0 0.3 mA 0.2 mA ...

Page 9

MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR4219  ...

Page 10

UNR421x Series Characteristics charts of UNR421D  25° 0.9 mA 0.8 mA 0.5 mA 0 0 0.2 mA ...

Page 11

1MHz = 25° 0 100 Collector-base voltage V (V) CB Characteristics charts of UNR421F  ...

Page 12

UNR421x Series Characteristics charts of UNR421K  240 = 25° 200 160 120 1 0 ...

Page 13

MHz = 25° 100 Collector-base voltage V (V) CB  100 = 0.2 ...

Page 14

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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