LMN400B01 Diodes Incorporated, LMN400B01 Datasheet

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LMN400B01

Manufacturer Part Number
LMN400B01
Description
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET
Manufacturer
Diodes Incorporated
Datasheet
DS30699 Rev. 5 - 2
General Description
Features
Mechanical Data
Thermal Characteristics
Notes:
Maximum Ratings, Total Device
Power Dissipation (Note 3)
Power Derating Factor above 100°C
Output Current
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to
one heated junction of PNP transistor)
DDTB122LU_DIE
DSNM6047_DIE (with Gate Pull-Down Resistor)
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.016 grams (approx.)
LMN400B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete pass transistor with stable
V
support continuous maximum current of 400 mA . It also
contains a discrete N-MOSFET with gate pull-down resistor
that can be used as control. The component devices can
be used as a part of a circuit or as a stand alone discrete
device.
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
CE(SAT)
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
1. No purposefully added lead.
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf
which does not depend on input voltage and can
Sub-Components
Characteristic
Characteristic
TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR
Lead-free Green
@ T
Reference
A
Q1
Q2
= 25 C unless otherwise specified
www.diodes.com
1 of 10
PNP Transistor
Symbol
Device Type
N-MOSFET
P
I
P
out
der
d
400mA LOAD SWITCH FEATURING PNP
Symbol
T
R
j
, T
JA
stg
Q1
PNP
Fig. 2 Schematic and Pin Configuration
C_Q1
E_Q1
1
6
C
E
DDTB122LU_DIE
R1
B
R1 (NOM)
1
10K
Fig. 1: SOT-26
2
10K
220
R2
-55 to +150
Value
300
400
DSNM6047_DIE
2.4
3
B_Q1
Value
G_Q2
417
2
LMN400B01
5
R2 (NOM) R3 (NOM)
.
6
220
5
R3
37K
G
4
S_Q2
D_Q2
3
4
S
D
NMOSFET
Q2
37K
Diodes Incorporated
mW/°C
Unit
mW
mA
Unit
C/W
LMN400B01
C
Figure
2
2

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LMN400B01 Summary of contents

Page 1

... TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR General Description LMN400B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable V which does not depend on input voltage and can CE(SAT) support continuous maximum current of 400 mA ...

Page 2

... Value V -50 CBO V -50 CEO V - -400 unless otherwise specified A Symbol V DSS V DGR V GSS = 10V www.diodes.com = 25 C unless otherwise specified Unit Value Unit +/-20 V +/-40 115 mA 800 115 mA LMN400B01 ...

Page 3

... -5V -400 -0.3V -5V, = -2.5V -0 -50mA /-2.5mA - - -5V -400mA -1 -2 -50mA -5mA -400mA -20mA -5 MHz V = -10V -5mA 100MHz V = -10V 0A 1MHz LMN400B01 ...

Page 4

... V = 30V, V =10V 200mA 150 115 mA 115 mA 800 7mA lb = 8mA T = 25° 6mA lb = 5mA lb = 4mA lb = 3mA lb = 2mA lb = 1mA 4.5 5.0 4.0 5.5 V COLLECTOR VOLTAGE(V) CE_SAT Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP) LMN400B01 ...

Page 5

... T = 150° 85° COLLECTOR CURRENT (A) C Fig vs. I CE(SAT -55° 125° 25° 150° 85°C A 100 1000 10000 , I COLLECTOR CURRENT (mA) C Fig vs. I BE(ON) C 1000 LMN400B01 ...

Page 6

... GATE-SOURCE VOLTAGE (V) GS Fig. 11 Transfer Characteristics Pulsed T = 125° 150° 85° 25° -55°C A 0.01 0 DRAIN CURRENT ( vs. Drain Current T = 25°C A Pulsed I = 115mA GATE SOURCE VOLTAGE (V) GS, vs. Gate-Source Voltage LMN400B01 ...

Page 7

... T = 150° 25° 85° Pulsed 0 SOURCE-DRAIN VOLTAGE (V) SD Fig. 17 Reverse Drain Current vs. Source-Drain Voltage T = -55° 25° 85° 125° 150°C A 0.2 0.4 0.6 0 DRAIN CURRENT (A) D Fig. 19 Forward Transconductance > DS(ON) LMN400B01 ...

Page 8

... Application Details PNP Transistor (DDTB122LU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN400B01 can be used as a discrete entity for general application integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device ...

Page 9

... PM3 = Product Type Marking Code Date Code Marking Y = Year ex 2006 M = Month ex September 2006 T March Apr May Jun Jul www.diodes.com Shipping 3000/Tape & Reel 2007 2008 2009 Aug Sep Oct Nov Dec LMN400B01 ...

Page 10

... Diodes Incorporated. DS30699 Rev Dim Min A 0.35 B 1 0.013 0.35 M 0.1 0 All Dimensions in mm Figure 24 Dimensions Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT SOT-26 Max Typ 0.5 0.38 1.7 1.6 3 2.8 - 0.95 - 0.55 3.1 3 0.1 0.05 1.3 1.1 0.55 0.4 0.2 0.15 8° - SOT-26* 3.2 1.6 0.55 0.8 2.4 0.95 LMN400B01 ...

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