ALD114904A Advanced Linear Devices, ALD114904A Datasheet

ALD114904A

Manufacturer Part Number

ALD114904A

Description

(ALD114804 / ALD114904) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD114904A.pdf (2 pages)

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GENERAL DESCRIPTION

ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-

Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS

technology. These devices are intended for low voltage, small signal applica-

tions. They are excellent functional replacements for normally-closed relay appli-

cations, as they are normally on (conducting) without any power applied, but

could be turned off or modulated when system power supply is turned on. These

MOSFETS have the unique characteristics of, when the gate is grounded, oper-

ating in the resistance mode for low drain voltage levels and in the current source

mode for higher voltage levels and providing a constant drain current.

ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for

exceptional device electrical characteristics matching. As these devices are on

the same monolithic chip, they also exhibit excellent temperature tracking char-

acteristics. They are versatile as design components for a broad range of analog

applications, such as basic building blocks for current sources, differential ampli-

fier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual MOSFET also

exhibits well controlled parameters, enabling the user to depend on tight design

limits corresponding to well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are suitable for switching and amplifying applica-

tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems

where low input bias current, low input capacitance and fast switching speed are

desired. These devices exhibit well controlled turn-off and sub-threshold

charactersitics and therefore can be used in designs that depend on sub-thresh-

old characteristics.

The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in

precision applications which require very high current gain, beta, such as current

mirrors and current sources. A sample calculation of the DC current gain at a

drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is

recommended that the user, for most applications, connect V+ pin to the most

positive voltage potential (or left open unused) and V- and N/C pins to the most

negative voltage potential in the system. All other pins must have voltages within

these voltage limits.

FEATURES

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -0.4V +/- 0.02V

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

GS(th)

ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA

ALD114804 PC ALD114804SC

16-Pin

Plastic Dip

Package

match (V

0°C to +70°C

DS(ON)

INEAR

DVANCED

EVICES,

@ V

) — 20mV

Operating Temperature Range*

16-Pin

SOIC

Package

=0.0V of 5.4KΩ

NC.

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

Ω typical

GS(th)

temperature coefficient

ALD114904PA

8-Pin

Plastic Dip

Package

MATCHED PAIR MOSFET ARRAY

0°C to +70°C

ALD114904SA

SOIC

Package

8-Pin

www.aldinc.com

ALD114804/ALD114804A/ALD114904/ALD114904A

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital

• Ultra low operating voltage (<0.2V) analog and

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators

PIN CONFIGURATION

circuits

digital circuits

N/C*

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PC, SC PACKAGES

PA, SA PACKAGES

M 4

ALD114904

M 1

ALD114804

M 1

M 2

M 3

M 2

V -

GS(th)

V -

N/C*

= -0.4V

EPAD

Related parts for ALD114904A

ALD114904A Summary of contents

Page 1

... These devices exhibit well controlled turn-off and sub-threshold charactersitics and therefore can be used in designs that depend on sub-thresh- old characteristics. The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000 ...

Page 2

... Drain Source Breakdown Voltage Drain Source Leakage Current 1 Gate Leakage Current 1 Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes: Consists of junction leakage currents 1 ALD114804/ALD114804A/ALD114904/ALD114904A ° C unless otherwise specified ALD114808A / ALD114908A ALD110848 / ALD114908 Symbol Min Typ Max V GS(th) -0.42 -0.40 -0. ...

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