ALD114913 Advanced Linear Devices, ALD114913 Datasheet

ALD114913

Manufacturer Part Number

ALD114913

Description

(ALD114813 / ALD114913) QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD114913.pdf (2 pages)

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GENERAL DESCRIPTION

ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched

at the factory using ALD’s proven EPAD CMOS technology. These devices are

intended for low voltage, small signal applications. They are excellent functional

replacements for normally-closed relay applications, as they are normally on (con-

ducting) without any power applied, but could be turned off or modulated when

system power supply is turned on. These MOSFETS have the unique character-

istics of, when the gate is grounded, operating in the resistance mode for low

drain voltage levels and in the current source mode for higher voltage levels and

providing a constant drain current.

These MOSFETS are designed for exceptional device electrical characteristics

matching. As these devices are on the same monolithic chip, they also exhibit

excellent temperature tracking characteristics. They are versatile as design com-

ponents for a broad range of analog applications, and they are basic building

blocks for current sources, differential amplifier input stages, transmission gates,

and multiplexer applications. Besides matched pair electrical characteristics, each

individual MOSFET also exhibits well controlled parameters, enabling the user to

depend on tight design limits. Even units from different batches and different date

of manufacture have correspondingly well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are designed for switching and amplifying appli-

cations in single 1.5V to +/-5V systems where low input bias current, low input

capacitance and fast switching speed are desired. These devices exhibit well

controlled turn-off and sub-threshold charactersitics and therefore can be used in

designs that depend on sub-threshold characteristics.

The ALD114813/ALD114913 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user, for

most applications, connect V+ pin to the most positive voltage potential (or left

open unused) and V- and N/C pins to the most negative voltage potential in the

system. All other pins must have voltages within these voltage limits.

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

FEATURES

• Depletion mode (normally ON) without power

• Precision Gate Threshold Voltages: -1.30V +/- 0.04V

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ALD114813PC

16-Pin

GS(th)

Plastic Dip

Package

match (V

0°C to +70°C

DS(ON)

INEAR

DVANCED

EVICES,

ALD114813SC

16-Pin

SOIC

Package

) — 20mV

Operating Temperature Range*

=0.0V of 1.3KΩ

NC.

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

Ω typical

GS(th)

ALD114913PA

temperature coefficient

Plastic Dip

Package

8-Pin

MATCHED PAIR MOSFET ARRAYS

0°C to +70°C

ALD114913SA

SOIC

Package

8-Pin

www.aldinc.com

APPLICATIONS

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters

PIN CONFIGURATION

N/C*

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PA, SA PACKAGES

PC, SC PACKAGES

ALD114913

M 1

M 4

ALD114813/ALD114913

ALD114813

M 1

M 3

M 2

V -

GS(th)

N/C*

V -

N/C*

= -1.3V

EPAD

Related parts for ALD114913

ALD114913 Summary of contents

Page 1

... The ALD114813/ALD114913 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. A sample calculation of the DC current gain at a drain current of 3mA and gate input leakage current of 30pA = 100,000,000 ...

Page 2

... Drain Source Leakage Current 1 Gate Leakage Current 1 Input Capacitance Transfer Reverse Capacitance Turn-on Delay Time Turn-off Delay Time Crosstalk Notes: Consists of junction leakage currents 1 ALD114813/ALD114913 ° C unless otherwise specified ALD114813/ALD114913 Symbol Min Typ V GS(th) -1.34 -1. VOS 5 TC VGS(th) -1.7 0.0 +1 (ON) 12 ...

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