22C10 CatalystSemiconductor, 22C10 Datasheet - Page 4

• Manufacturer Part Number: 22C10
• Description: 256-BitNonvolatileCMOSStaticRAM
• Manufacturer: CatalystSemiconductor

A.C. CHARACTERISTICS, Read Cycle
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25018-0A 2/98 N-1
A.C. CHARACTERISTICS, Write Cycle
V
CC
CC
Symbol
Symbol
t
t
t
WZ
HZ
LZ
t
t
t
t
t
t
t
t
t
t
t
t
OW
= +5V 10%, unless otherwise specified.
= +5V 10%, unless otherwise specified.
WC
CW
WP
WR
DW
RC
CO
OH
DH
AA
AS
(1)
(1)
(1)
Read Cycle Time
Address Access Time
CS Access Time
Output Data Hold Time
CS Enable Time
CS Disable Time
Write Cycle Time
CS Write Pulse Width
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid Time
Data Hold Time
Output Disable Time
Output Enable Time
Parameter
Parameter
Min.
Min.
200
200
150
150
100
50
25
22C10-20
22C10-20
0
0
0
0
Max.
Max.
200
200
100
100
4
Min.
Min.
300
150
300
150
100
50
25
0
0
0
0
22C10-30
22C10-30
Max.
Max.
300
300
100
100
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Conditions
C
+1TTL gate
V
V
V
V
Conditions
C
+1TTL gate
V
V
V
V
OH
OL
IH
IL
OH
OL
IH
IL
L
L
= 100pF
= 100pF
= 0.65V
= 0.65V
= 2.2V
= 2.2V
= 0.65V
= 0.65V
= 2.2V
= 2.2V