22C10 CatalystSemiconductor, 22C10 Datasheet - Page 7

• Manufacturer Part Number: 22C10
• Description: 256-BitNonvolatileCMOSStaticRAM
• Manufacturer: CatalystSemiconductor

Write
With the chip enabled and the nonvolatile functions
inhibited, the Write Enable (WE) pin will select the write
mode when driven to a low level. In this mode, the
address must be supplied for the byte being written.
After the set-up time (t
supplied to pins I/O
Figure 2. Write Cycle Timing
Figure 3. Early Write Cycle Timing
DATA OUT
ADDRESS
DATA OUT
ADDRESS
DATA IN
DATA IN
WE
WE
CS
CS
0
–I/O
AS
3
. When these conditions, in-
), the input data must be
t AS
t AS
t WZ
7
t CW
HIGH-Z
cluding the write pulse width time (t
will be written to the specified location in the Static RAM.
A write function may also be initiated from the standby
mode by driving WE low, inhibiting the nonvolatile func-
tions, supplying valid addresses, and then taking CS low
and supplying input data.
t WC
t WC
t WP
t WP
t CW
t DW
DATA VALID
t DW
DATA VALID
HIGH-Z
t DH
t DH
t WR
t OW
t WR
WP
Doc. No. 25018-0A 2/98 N-1
) are met, the data
5153 FHD F04
5153 FHD F05