VP0104N3 Supertex Inc, VP0104N3 Datasheet

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VP0104N3

Manufacturer Part Number
VP0104N3
Description
P-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
Supertex Inc
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
VP0104N3-G
Manufacturer:
Supertex
Quantity:
7 000
Ordering Information
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
BV
BV
-40V
-60V
-90V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
8.0Ω
8.0Ω
8.0Ω
DS(ON)
(min)
-0.5A
-0.5A
-0.5A
I
D(ON)
P-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
BV
BV
300°C
± 20V
VP0104N3
VP0106N3
VP0109N3
DGS
DSS
TO-92
Order Number / Package
1
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Note: See Package Outline section for dimensions.
VP0109ND
Die
TO-92
S G D
VP0104
VP0106
VP0109

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VP0104N3 Summary of contents

Page 1

... Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. P-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package I D(ON) (min) TO-92 -0.5A VP0104N3 -0.5A VP0106N3 -0.5A VP0109N3 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 -0.25A * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...

Page 3

Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0 -10 -20 -30 V (volts) DS Transconductance vs. Drain Current 250 V = -25V DS 200 150 100 -0.2 -0.4 -0.6 I (amperes) D Maximum ...

Page 4

... Transfer Characteristics -1 -25V DS -0.8 -0.6 -0.4 -0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 -10 -20 V (volts) DS ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited 100 150 0 V 1.6 1.4 1 125 °C A 1.0 0.8 0.6 -8 -10 -50 - 1MHz - ISS ...

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