NT256D64S8HA0G-6 Nanya Technology, NT256D64S8HA0G-6 Datasheet
NT256D64S8HA0G-6
Related parts for NT256D64S8HA0G-6
NT256D64S8HA0G-6 Summary of contents
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... Data is read or written on both clock edges Description NT256D64S8HA0G unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Module (DIMM), organized as a dual-bank high-speed memory array. The 32Mx64 module is a two-bank DIMM that uses sixteen 16Mx8 DDR SDRAMs in 400 mil TSOP packages. The DIMM achieves high-speed data transfer rates 333MHz. The DIMM is intended for use in applications operating from 133 MHz to 166 MHz clock speeds with data rates of 266 to 333 MHz ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Pin Description CK0, CK1, CK2 Differential Clock Inputs CK0 , CK1 , CK2 CKE0, CKE1 Clock Enable RAS Row Address Strobe CAS Column Address Strobe WE Write Enable Chip Selects A0-A9, A11 Address Inputs A10/AP Address Input/Autoprecharge ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0 , CK1, CK2 (SSTL) Edge Negative CK0 , CK1 , CK2 (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active (SSTL Low Active , , (SSTL) RAS CAS WE Low V Supply REF ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Functional Block Diagram S1 S0 DQS0 DQS9 DM CS DQS DQ0 I/O 7 DQ1 I/O 6 DQ2 I/O 1 DQ3 I DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 DQS1 DQS10 DM DQS CS DQ8 I/O 7 DQ9 I/O 6 DQ10 I/O 1 DQ11 I DQ12 I/O 5 DQ13 I/O 4 DQ14 I/O 3 DQ15 I/O 2 DQS2 DQS11 DM CS DQS DQ16 ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Absolute Maximum Ratings Symbol Voltage on I/O pins relative to Vss IN OUT V Voltage on Input relative to Vss IN V Voltage on V supply relative to Vss Voltage on V supply relative to Vss DDQ DDQ T Operating Temperature (Ambient Storage Temperature (Plastic) ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM DC Electrical Characteristics and Operating Conditions ( ° ° 2.5V ± 0.2V DDQ Symbol V DD Supply Voltage V DDQ I/O Supply Voltage Supply Voltage, I/O Supply Voltage SS SSQ V /O Reference Voltage REF V I/O Termination Voltage (System Input High (Logic1) Voltage ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM AC Characteristics (Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating Conditions, Operating, Standby, and Refresh Currents, and Electrical Characteristics and AC Timing.) 1. All voltages referenced Tests for AC timing and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but DD the related specifications and device operation are guaranteed for the full voltage range specified ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Operating, Standby, and Refresh Currents ( ° ° 2.5V ± 0.2V DDQ Symbol Parameter/Condition Operating Current : one bank; active / precharge DQ, DM, and DQS inputs changing twice per clock cycle (MIN) DD0 address and control inputs changing once per clock cycle Operating Current : one bank ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM AC Timing Specifications for DDR SDRAM Devices Used on Module ( ° ° 2.5V ± 0.2V DDQ Symbol Parameter t DQ output access time from CK DQS output access time from CK/ CK DQSCK t CK high-level width low-level width ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM AC Timing Specification Notes 1. Input slew rate = 1V/ns. 2. The CK/ CK input reference level (for timing reference to CK the point at which CK and CK cross: the input reference level for signals other than CK REF 3. Inputs are not recognized as valid until V 4 ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Serial Presence Detect Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly 4 Number of Column Addresses on Assembly 5 Number of DIMM Bank 6. Data Width of Assembly 7 Data Width of Assembly (cont’ ) ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Package Dimensions Detail A 6.35 0.250 1.80 0.071 Note : All dimensions are typical unless otherwise stated. Millimeters Unit : Inches Preliminary, 11/2001 FRONT 133.35 5.25 128.95 5.077 Detail A Detail B BACK Detail B 1.00 Width 0.039 1.27 Pitch 0.05 12 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...
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... NT256D64S8HA0G-6 256MB : 32M x 64 PC2700 Unbuffered DIMM Revision Log Date Rev. 11/2001 Preliminary *1 Initial release [Note] *1 Preliminary: PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY NANYA WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY NANYA TO MEET MICRON’ S PRODUCTION DATA SHEET SPECIFICATIONS ...