Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
F F F F EA
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes:(1)RMS Current of Diode 90Arms max.
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(4) R
diode - ultra soft fast recovery diode(USFD).
I I I I G G G G B B B B T T T T M M M M OD
EA
EAT T T T U U U U RE
EA
MBM300GS12AW
(2)(3)Recommended Value 2.45N.m(25kgf.cm)
OD
OD
ODU U U U L L L L E E E E
RE
RE
RES S S S
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
Item
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Mounting
Terminals
1ms
1ms
DC
DC
°C
G
)
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
V
CE(sat)
C
t
t
GES
t
V
V
CES
V
t
t
on
off
FM
T
rr
I
ies
I
r
f
Pc
I
I
T
GES
CES
FM
Cp
ISO
-
-
stg
C
F
j
°C
)
Unit
°C/W
mA
nA
pF
ms
ms
V
V
V
OUTLINE DRAWING
(kgf.cm)
Weight: 540(g)
Unit
V
N.m
Min.
°C
°C
W
V
RMS
V
A
A
-
-
-
-
-
-
-
-
-
-
-
-
-
28,000
Typ. Max.
0.25
0.25
0.75
2.7
0.4
2.5
-
-
-
-
-
-
0.073
±500 V
0.35 R
0.35 I
1.0
3.4
0.5
0.7
1.1
3.5
0.2
10
C2E1
-
TERMINALS
V
I
V
V
V
R
V
I
C
F
F
CE
GE
CE
CE
CC
L
G
GE
=300A,V
=300A,V
=300A,V
MBM300GS12AW
=2.0W
=4.3W
2,500(AC 1 minute)
E2
=1,200V,V
=±20V,V
=5V, I
=10V,V
=600V
=±15V
-40 ~ +150
-40 ~ +125
Test Conditions
C
1,200
1,700
Junction to case
2.94(30)
2.94(30)
GE
GE
GE
C1
±20
300
600
600
GE
300
=300mA
G2
E2
E1
G1
CE
=0V
=-10V, di/dt=400A/ms
=15V
=0V,f=1MHz
GE
=0V
=0V
PDE-M300GS12AW-0
(1)
(4)
Unit in mm
(2)
(3)