TIM3742-16SL-341 Toshiba Semiconductor, TIM3742-16SL-341 Datasheet
TIM3742-16SL-341
Available stocks
Related parts for TIM3742-16SL-341
TIM3742-16SL-341 Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM3742-16SL-341 HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz BROAD BAND INTERNALLY MATCHED FET ...
Page 2
... Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) 4 – C1.0 HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM3742-16SL-341 SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅4. Pin=31.5dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 45 freq.=3.6GHz 44 V =10V DS ≅4. TIM3742-16SL-341 3.4 3.5 Frequency(GHz) Pout ηadd 29 31 Pin (dBm ...
Page 4
... TIM3742-16SL-341 POWER DISSIPATION VS. CASE TEMPERATURE Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics - ≅4. freq.= 3.45GHz ∆ -20 f= 5MHz - -40 -50 - Po(dBm)@ Single Carrier Level 80 120 160 Tc (℃) Tc(° 200 ...