ntf3055l175 ON Semiconductor, ntf3055l175 Datasheet
ntf3055l175
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ntf3055l175 Summary of contents
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... DS(on) N−Channel SOT−223 CASE 318E 1 STYLE MARKING DIAGRAM AYW 5L175 Assembly Location Y = Year W = Work Week 5L175 = Device Code G = Pb−Free Package PIN ASSIGNMENT Drain Gate Drain Source ORDERING INFORMATION Publication Order Number: NTF3055L175/D ...
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... Gate Charge SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. Switching characteristics are independent of operating junction temperatures. NTF3055L175 (T = 25°C unless otherwise noted Vdc Vdc ...
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... Figure 3. On−Resistance versus Gate−to−Source Voltage 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTF3055L175 3.2 ≥ 2.8 2 1.6 1 25°C 0 2.0 2.4 2.8 1 1.4 V GATE−TO−SOURCE VOLTAGE (VOLTS) GS, Figure 2 ...
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... SINGLE PULSE T = 25° 0.1 0.01 R LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.001 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTF3055L175 25° iss 2 oss 1 rss Drain−to−Source Voltage versus Total Charge ...
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... ORDERING INFORMATION Device NTF3055L175T1 NTF3055L175T1G NTF3055L175T3 NTF3055L175T3G NTF3055L175T3LF †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTF3055L175 TEST TYPE > MIN PAD 1 OZ (Cu Area = 0.272 sq in) < DIE SIZE MILS ...
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... DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTF3055L175/D MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° ...