ipd50n06s4l-12 Infineon Technologies Corporation, ipd50n06s4l-12 Datasheet
ipd50n06s4l-12
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ipd50n06s4l-12 Summary of contents
Page 1
... =25°C D,pulse =25A =25°C tot stg - - page 1 IPD50N06S4L-12 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 200 33 50 ±16 50 -55 ... +175 55/175/ Unit °C 2009-03-23 ...
Page 2
... GS(th =60V, V =0V DSS T =25° =60V, V =0V =125° =16V, V =0V GSS =4.5V, I =25A DS(on =10V, I =50A GS D page 2 IPD50N06S4L-12 Values min. typ. max 3 1.2 1.7 2 100 - - 100 - 14.6 21.6 - 9.6 12.0 2009-03-23 Unit K/W V µ ...
Page 3
... C I S,pulse V =0V, I =50A =25° =30V /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD50N06S4L-12 Values min. typ. max. - 2220 2890 - 540 - =10V 4.0 ...
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... Max. transient thermal impedance Z = f(t thJC parameter µ µ 100 µ 100 [V] page 4 IPD50N06S4L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] ...
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... [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 20 -55 ° °C 16 175 ° -60 [V] page 5 IPD50N06S4L- ° 4 120 100 T [° ...
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... Avalanche characteristics parameter: T 100 °C 25 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD50N06S4L- MHz [ j(start) 25 °C 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss 25 30 1000 2009-03-23 ...
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... Q gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD50N06S4L- -55 - 105 T [° 145 Q gate 2009-03-23 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD50N06S4L-12 2009-03-23 ...
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... Revision History Version Revision 1.0 Rev. 1.0 Date 23.03.2009 page 9 IPD50N06S4L-12 Changes Final data sheet 2009-03-23 ...