psmn004-55w NXP Semiconductors, psmn004-55w Datasheet - Page 5

• Manufacturer Part Number: psmn004-55w
• Description: Psmn004-55w N-channel Logic Level Trenchmos Tm Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
100
220
200
180
160
140
120
100
2
1
0
90
80
70
60
50
40
30
20
10
80
60
40
20
-60
0
Fig.8. Typical transconductance, T
0
Normalised On-state Resistance
0
0
Drain current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
VDS > ID X RDS(ON)
-40
0.2 0.4 0.6 0.8
10
-20
20
R
Junction temperature, Tj (C)
0
DS(ON)
Gate-source voltage, VGS (V)
30
20
1
Drain current, ID (A)
/R
I
D
g
1.2 1.4 1.6 1.8
40
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
50
GS
175 C
D
)
80
)
60
= f(T
Tj = 25 C
100 120 140 160 180
2
70
2.2 2.4 2.6 2.8
j
)
Tj = 25 C
j
80
= 25 ˚C .
175 C
90
100
3
transistor
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
2.25
1.75
1.25
0.75
0.25
100000
1.5
0.5
10000
V
2
1
0
1000
Fig.12. Typical capacitances, C
-60 -40 -20
100
I
C = f(V
GS(TO)
D
Threshold Voltage, VGS(TO) (V)
= f(V
0.1
0
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Capacitances, Ciss, Coss, Crss (pF)
Fig.10. Gate threshold voltage.
= f(T
GS)
DS
minimum
); conditions: V
0.5
; conditions: T
j
); conditions: I
0
Gate-source voltage, VGS (V)
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
20
1
1
typical
40
60
minimum
1.5
j
GS
typical
D
= 25 ˚C; V
maximum
80 100 120 140 160 180
= 1 mA; V
PSMN004-55W
= 0 V; f = 1 MHz
Product specification
maximum
10
2
iss
, C
DS
DS
oss
2.5
= V
, C
= V
Ciss
Coss
Crss
Rev 1.100
GS
rss
GS
100
.
3