mmft2n25e Freescale Semiconductor, Inc, mmft2n25e Datasheet
mmft2n25e
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mmft2n25e Summary of contents
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... TMOS is a registered trademark of Motorola, Inc. E–FET is a trademark of Motorola, Inc. © Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 2 Order this document by MMFT2N25E/D MMFT2N25E TMOS POWER FET 2.0 AMPERES 250 VOLTS W R DS(on) = 3.5 ® CASE 318E–04, STYLE 3 TO–261AA ...
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... MMFT2N25E ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( 0.25 mA) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 250 250 125°C) Gate–Body Leakage Current ( ± ...
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... Figure 4. On–Resistance versus Drain Current 100 1.0 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–to–Source Leakage Current MMFT2N25E 100°C – 55°C 25°C 4.5 5.0 5.5 6.0 6.5 7.0 7 1.5 2.0 2.5 3.0 3.5 4 DRAIN CURRENT (AMPS) and Gate Voltage 125° ...
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... MMFT2N25E 350 iss 300 250 200 C rss 150 100 50 C rss 0 –10 –5 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 25° 2 125 d(off) ...
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... TIME (seconds) Figure 13. Thermal Response between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.15 3.8 0.079 2.0 0.248 6.3 0.091 0.091 2.3 2.3 0.079 2.0 0.059 0.059 0.059 inches 1.5 1.5 1.5 SOT–223 MMFT2N25E 1.0E+1 1.0E+2 1.0E ...
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... B 0.130 0.145 3.30 3.70 C 0.060 0.068 1.50 1.75 D 0.024 0.035 0.60 0.89 F 0.115 0.126 2.90 3.20 G 0.087 0.094 2.20 2.40 H 0.0008 0.0040 0.020 0.100 J 0.009 0.014 0.24 0.35 K 0.060 0.078 1.50 2.00 L 0.033 0.041 0.85 1. 0.264 0.287 6.70 7.30 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN Mfax is a trademark of Motorola, Inc. MMFT2N25E/D ...