mrfe6s9060n Freescale Semiconductor, Inc, mrfe6s9060n Datasheet - Page 7

• Manufacturer Part Number: mrfe6s9060n
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
1
Figure 7. Intermodulation Distortion Products
5th Order
3rd Order
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
DD
7th Order
= 28 Vdc, I
P
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
DQ
= 450 mA
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
58
57
56
55
54
53
52
51
50
49
48
65
60
55
50
45
40
35
30
25
20
15
10
5
0
27
1
η
V
f = 880 MHz, N−CDMA IS−95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
ACPR
and Drain Efficiency versus Output Power
P1dB = 49.41 dBm
(87.3 W)
D
Figure 9. Pulsed CW Output Power versus
DD
P3dB = 50.39 dBm (109.4 W)
28
= 28 Vdc, I
G
ps
TYPICAL CHARACTERISTICS
29
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
100
ALT1
30
P
= 450 mA
in
P6dB = 51.31 dBm (135.21 W)
, INPUT POWER (dBm)
Input Power
31
200
10
32
V
Pulsed CW, 12 μsec(on)
1% Duty Cycle, f = 880 MHz
DD
33
= 28 Vdc, I
−70
−10
−20
−30
−40
−50
−60
85_C
T
0
C
25_C
0.1
34
= −30_C
Figure 8. Intermodulation Distortion Products
−30_C
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
IM7−U
DQ
IM3−L
DD
IM3−U
IM7−L
DQ
25_C
85_C
= 450 mA, Two−Tone Measurements
35
= 28 Vdc, P
= 450 mA
Ideal
−30_C
−30_C
25_C
IM5−L
Actual
36
IM5−U
85_C
versus Tone Spacing
out
TWO−TONE SPACING (MHz)
100
37
= 60 W (PEP)
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
−80
1
MRFE6S9060NR1
10
80
7