2sj574 Renesas Electronics Corporation., 2sj574 Datasheet - Page 6

• Manufacturer Part Number: 2sj574
• Description: Silicon P Channel Mos Fet High Speed Switching
• Manufacturer: Renesas Electronics Corporation.

2SJ574
-1.0
-0.8
-0.6
-0.4
-0.2
–40
0
5
4
3
2
1
0
Gate to Source Voltage
Drain to SOurce Saturation Voltage
Static Drain to Source on State
V
Resistance vs. Temperature
vs. Gate to Source Voltage
GS
Case Temperature
-2
0
= -4V
-10V
-50m A, -150m A, -300m A
40
-4
I
-50m A, -150m A
D
80
-6
= -300m A
I
D
Pulse Test
Pulse Test
Tc
V
= -300mA
GS
120
-8
-150mA
-50m A
( °C)
(V)
-10
160
0.05
0.05
1.0
1.0
0.1
0.5
0.2
50
10
20
5
2
2
-0.1
5
-0.1
V
Pulse Test
Pulse Test
DS
Static Drain to Source on State
Resistance vs. Drain Current
Forward Transfer Admittance
= -10 V
Drain Current
Drain Current
-.0.2
-0.2
vs. Drain Current
25 °C
Tc = –25 °C
-4 V
I
I
D
-0.5
V
D
-0.5
75 °C
GS
(A)
(A)
= -10 V
-1.0
-1.0