si3911dv Vishay, si3911dv Datasheet - Page 2

• Manufacturer Part Number: si3911dv
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si3911DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
6
4
2
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
V
2
GS
a
= 4.5 thru 2.5 V
3
_
2 V
Symbol
V
r
I
DS(on)
DS(on)
t
t
1.5 V
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
SD
t
t
4
gd
rr
fs
gs
r
f
g
_
5
New Product
V
DS
I
V
D
DS
^ –1 A, V
= –10 V, V
I
F
V
= –16 V, V
V
V
V
V
= –1.05 A, di/dt = 100 A/ms
V
V
I
GS
DS
S
GS
GS
DS
V
V
V
DS
DS
Test Condition
= –1.05 A, V
DD
DD
DS
= –5 V, V
= –4.5 V, I
= V
= –2.5 V, I
= –1.8 V, I
= –16 V, V
= –5 V, I
= 0 V, V
= –4 V, R
= –4 V, R
GEN
GS
GS
GS
, I
= –4.5 V, I
= –4.5 V, R
D
= 0 V, T
GS
D
= –250 mA
GS
D
D
D
GS
GS
= –2.2 A
L
L
= –4.5 V
= –1.8 A
= –1.0 A
= –2.2 A
= 8 W
= 8 W
= "8 V
= 0 V
= 0 V
J
D
10
= 85_C
G
= –2.2 A
8
6
4
2
0
= 6 W
0.0
0.5
V
GS
Transfer Characteristics
–0.45
Min
1.0
–5
– Gate-to-Source Voltage (V)
T
1.5
C
25_C
= –55_C
0.163
0.240
0.115
Typ
–0.8
0.9
12
29
24
30
20
5
5
1
2.0
S-20275—Rev. B, 18-Mar-02
Document Number: 71380
"100
2.5
Max
0.145
0.200
0.300
–1.1
–10
7.5
–1
20
50
45
50
40
125_C
3.0
Unit
nA
m
mA
nC
ns
W
V
A
S
V
3.5