si3200-x-gs Silicon Laboratories, si3200-x-gs Datasheet - Page 6
si3200-x-gs
Manufacturer Part Number
si3200-x-gs
Description
Dual Programmable Cmos Slic With Line Monitoring
Manufacturer
Silicon Laboratories
Datasheet
1.SI3200-X-GS.pdf
(128 pages)
- Current page: 6 of 128
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Table 3. Power Supply Characteristics
(V
Si3232
6
Parameter
V
Supply Current
(Si3232)
V
Current (Si3200)
V
Current (Si3200)
Notes:
DD
DD1
DD
BAT
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
, V
Supply
–V
Supply
DD1
include an additional V
DD4
–V
DD4
=
3.3 V, T
I
VDD1
A
Symbol
=
I
BAT
I
VBAT
VDD
0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
–I
x I
VDD4
LIM
term.
Sleep mode, RESET = 0
Open (high impedance)
Active on-hook standby
Forward/reverse active off-hook
ABIAS = 4 mA
Forward/reverse active OHT
OBIAS = 4 mA
Ringing, V
V
Sleep mode, RESET = 0
Open (high impedance)
Active on-hook standby
Forward/reverse active off-hook,
ABIAS = 4 mA, V
Forward/reverse OHT, OBIAS = 4 mA,
V
Ringing, V
VBAT = –70 V, Sine Wave, 7 REN load
Sleep mode, RESET = 0, V
Open (high impedance), V
Active on-hook standby, V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
Forward/reverse OHT, OBIAS = 4 mA,
V
Ringing, V
V
BAT
BAT
BAT
BAT
= –70 V, Sine Wave, 1 REN load
= –70 V
= –70 V
= –70 V, Sine wave, 1 REN load
1
Preliminary Rev. 0.96
RING
RING
RING
Test Condition
= 45 V
= 45 V
= 45 V
BAT
BAT
= –24 V
= –24 V
rms
rms
rms
,
,
,
BAT
BAT
BAT
= –70 V
= –70 V
= –70 V
2
2
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.4 +
12 +
Typ
100
100
100
225
400
I
110
110
110
110
I
8.4
15
15
20
LIM
28
LIM
1
6
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
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