si4562dy Vishay, si4562dy Datasheet
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si4562dy
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si4562dy Summary of contents
Page 1
... 70_C 25_C 70_C stg Symbol R thJA Si4562DY Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 20 – "12 "12 "7.1 "6.2 "5.7 "4 "40 " ...
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... Si4562DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage Gate-Body Leakage I I GSS GSS Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current I DSS DSS ...
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... On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0 –50 Si4562DY Vishay Siliconix N-CHANNEL Transfer Characteristics T = 125_C C 25_C –55_C 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage ( ...
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... Si4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... 1 4500 3600 2700 1800 900 On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0 –50 –25 Si4562DY Vishay Siliconix P-CHANNEL Transfer Characteristics T = –55_C C 25_C 125_C – Gate-to-Source Voltage (V) GS Capacitance C iss C C rss oss – ...
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... Si4562DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.8 1.0 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 mA D 0.3 0.0 –0.3 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...