si4562dy Vishay, si4562dy Datasheet - Page 4

• Manufacturer Part Number: si4562dy
• Description: N- And P-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si4562DY
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.0
–0.2
–0.4
–0.6
40
10
0.4
0.2
0.01
1
0.1
0
–50
2
1
10
–4
Source-Drain Diode Forward Voltage
0.2
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
SD
0.4
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150_C
J
– Temperature (_C)
25
0.6
Single Pulse
10
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
I
D
= 250 mA
75
T
J
= 25_C
1.0
100
1.2
125
10
–2
Square Wave Pulse Duration (sec)
1.4
150
10
–1
0.10
0.08
0.06
0.04
0.02
30
24
18
12
0.01
0
6
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 7.1 A
1
1
V
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.10
P
– Gate-to-Source Voltage (V)
Single Pulse Power
DM
JM
– T
t
2
1
A
Time (sec)
= P
t
2
DM
Z
1.00
thJA
S-54940—Rev. A, 29-Sep-97
thJA
t
t
1
2
Document Number: 70717
10
3
(t)
= 62.5
N-CHANNEL
_
C/W
4
30
10.00
5