si4916dy Vishay, si4916dy Datasheet - Page 2

• Manufacturer Part Number: si4916dy
• Description: Dual N-channel 30-v Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4916DY
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
MOSFET SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
b
a
b
ΔV
Symbol
ΔV
V
r
GS(th)
I
DS(on)
I
I
V
V
GS(th)
D(on)
Q
Q
GSS
DSS
DS
g
Q
R
DS
SD
J
fs
gs
gd
g
g
/T
= 25 °C, unless otherwise noted
Steady State
/T
J
t ≤ 10 sec
J
V
DS
V
V
DS
DS
= 15 V, V
= 15 V, V
= 30 V, V
V
V
V
V
V
V
V
V
V
V
V
I
DS
GS
DS
GS
GS
GS
S
DS
DS
DS
I
GS
DS
S
= 1.7 A, V
= V
= 1 A, V
= 10 V, I
= 15 V, I
Symbol
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 0 V, V
= 30 V, V
= 5 V, V
I
= 10 V, I
= 15 V, I
R
R
D
Channel-1
Channel-2
GS
Test Conditions
thJA
thJF
GS
= 250 µA
GS
GS
= 4.5 V, I
, I
= 4.5 V, I
= 0 V, T
D
D
GS
GS
GS
D
D
GS
= 250 µA
D
D
D
D
= 250 µA
GS
= 10.5 A
= 10.5 A
= 10 A
= 8.5 A
= 9.3 A
= 10 A
= 0 V
= 10 V
= 20 V
= 0 V
= 0 V
D
J
D
= - 10.5 A
= 85 °C
Typ
54
32
= 10 A
Channel-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Max
65
38
Min
1.5
1.5
0.5
0.5
30
30
20
20
Typ
47
30
0.0145
Channel-2
0.015
0.019
0.018
Typ
0.75
0.47
S-62450-Rev. A, 27-Nov-06
6.6
8.9
2.9
3.4
2.3
2.4
1.9
2.3
24
25
- 6
- 6
30
35
Document Number: 74331
a
Max
0.018
0.018
0.023
0.022
60
35
2000
Max
100
100
100
3.0
2.7
1.1
0.5
2.9
3.5
15
10
14
1
mV/°C
°C/W
Unit
Unit
nA
µA
nC
Ω
Ω
V
V
A
S
V