2sk2311 TOSHIBA Semiconductor CORPORATION, 2sk2311 Datasheet - Page 2

• Manufacturer Part Number: 2sk2311
• Description: N Channel Mos Type High Speed, High Current Switching Applications Chopper Regulator, Dc-dc Converter And Switching Regulator Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K2311
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
DR
= 10 mA, V
= 25 A, V
= 25 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
≈ 48 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
/ dt = 50 A / μs
D
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
= 12 A
GS
GS
Test Condition
Test Condition
= 1 mA
= 12 A
DS
= 12 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
D
= 25 A
Min
Min
0.8
60
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Typ.
Typ.
200
550
130
—
—
—
—
57
36
16
20
30
55
38
25
13
—
—
—
50
35
2006-11-17
−1.8
2SK2311
Max
Max
±10
100
100
2.0
80
46
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
μA
μA
nC
μC
pF
ns
ns
V
V
S
A
A
V