irf7509pbf International Rectifier Corp., irf7509pbf Datasheet - Page 6

• Manufacturer Part Number: irf7509pbf
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

Fig 17. Typical On-Resistance Vs. Gate
6
Fig 19. Typical Capacitance Vs.
400
300
200
100
.6
.5
.4
.3
.2
.1
0
1
3
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
C
C
-V
V
iss
oss
rss
DS
5
V
C
C
C
6
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1000
, Gate to Source Voltage (V)
100
0.1
10
0.00001
= 0V,
= C
= C
= C
1
Voltage
D = 0.50
gs
gd
ds
I
0.20
0.10
0.05
0.02
0.01
+ C
+ C
10
= -2.0
9
gd
gd
f = 1MHz
, C
(THERMAL RESPONSE)
0.0001
ds
SINGLE PULSE
12
SHORTED
100
0.001
15
A
t , Rectangular Pulse Duration (sec)
1
N-P - Channel
0.01
0.1
Fig 18. Maximum Safe Operating Area
100
0.1
10
1. Duty factor D = t / t
2. Peak T = P
20
16
12
Notes:
1
Fig 20. Typical Gate Charge Vs.
8
4
0
1
0
T
T
Single Pulse
I
C
J
D
= 25 C
= 150 C
= -1.2A
1
J
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
2
°
Q , Total Gate Charge (nC)
DM
°
, Drain-to-Source Voltage (V)
G
x Z
1
thJA
4
P
2
DM
BY R
V
V
+ T
10
DS
DS
A
t
10
1
DS(on)
6
= -15V
= -24V
t
2
FOR TEST CIRCUIT
SEE FIGURE 9
8
10us
100us
1ms
10ms
100
www.irf.com
10
100
12
A