tc1706p1721 Transcom, Inc., tc1706p1721 Datasheet - Page 2

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tc1706p1721

Manufacturer Part Number
tc1706p1721
Description
3 W High Linearity And High Efficiency Gaas Power Fets
Manufacturer
Transcom, Inc.
Datasheet
ABSOLUTE MAXIMUM RATINGS (T
CHIP DIMENSIONS
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 C
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220 C to 250 C; Bond Tip Temperature: 150 C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
Web-Site:
Symbol
T
V
V
T
I
P
P
STG
DS
CH
DS
GS
in
T
G
D
www.transcominc.com.tw
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
D
G
90 Dasoong 7
Parameter
1510
G
D
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
!
12
- 65
G
D
31.5 dBm
11.5 W
C
Rating
175
Phone: 886-6-5050086
12 V
-5 V
I
to +175
DSS
A
=25 C)
C
G
D
C
2 / 4
D
G
470
Fax: 886-6-5051602
!
12
5 C; Handling Tool: Tweezers;
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
REV5_20070502
TC1706

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