SST34WA3283 Silicon Storage Technology, Inc., SST34WA3283 Datasheet

SST34WA3283

Manufacturer Part Number

SST34WA3283

Description

32 Mbit Burst Mode Concurrent Superflash Combomemory 32 Mbit Burst Mode Concurrent Superflash Combomemory

Manufacturer

Silicon Storage Technology, Inc.

Datasheet

1.SST34WA3283.pdf (76 pages)

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FEATURES:

• Flash Organization:

• PSRAM Organization:

• Single Voltage Read and Write Operations

• Top or Bottom Boot Block Protection

• Multiplexed Data/Address for reduced I/O count

• Low Power Consumption (Typical)

• Flexible Flash Memory Organization

• Concurrent Flash Memory Operation

• Erase-Suspend/Erase-Resume Capability

• Industry Standard CFI interface compatible

PRODUCT DESCRIPTION

The SST34WA32A3 / SST34WA32A4 / SST34WA3283 /

SST34WA3284 are 32 Mbit (2 Mbit x16) ComboMemory

devices which integrate a 32 Mbit flash with either a 16 Mbit

PSRAM or 8 Mbit PSRAM in a multi-chip package (MCP).

These devices utilize a single 1.8V supply and support

burst mode access and address / data multiplex

architecture.

The Combo Memory devices feature a 512 KWord uniform

multi-bank flash memory architecture that consists of four

banks that contain individually-erasable blocks and sectors

for increased flexibility. Either the top or bottom bank,

consists of 15 standard 32 KWord blocks and four

parameter 8 KWord blocks for added granularity. The

remaining three banks each contain uniform 32 KWord

blocks. Each 32 KWord block is further divided into sixteen

uniform 2 KWord sectors. Any bank can be read while

another bank is being erased or programmed, with zero

latency. In addition, these devices provide Erase-Suspend

mode during which data can be programmed to, or read

from, any sector or block that is not being erased.

S71358-01-000

32 Mbit Burst Mode Concurrent SuperFlash ComboMemory

– 2M x 16

– 8 Mbit: 512k X 16

– 16 Mbit: 1M x 16

–

– Bottom Boot Protection - SST34WA32x3

– Top Boot Protection - SST34WA32x4

– A

– Addresses are latched by AVD# control input when

– Standby Current: 50 µA

– 4 Banks (512 KW)

– 63 Uniform 32 KWord blocks

– Uniform Sectors (2KWord) for entire memory array

– Read While Program (RWP)

– Read While Erase (RWE)

– Read while Erase-Suspend

– Program while Erase-Suspend

– Read while Program during Erase-Suspend

BEF# is low

SST34WA32A3 / SST34WA32A4 / SST34WA3283 / SST34WA3284

–A

= 1.7V - 1.95V for Program, Erase and Read

multiplexed as DQ

11/07

–DQ

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Flash Synchronous Burst Mode Read (54 MHz/66 MHz)

• PSRAM Burst Mode Read/Write Access (54 MHz/66 MHz)

• Fast Program and Erase (Typical)

• Expanded Block Locking

• Flash Security ID

• End-of-Write Detection

• Packages Available

• Superior Reliability

• All non-Pb (lead-free) devices are RoHS compliant

SST34WA32A3/32A4/3283/3284 support synchronous

Burst mode Read from any address location of the flash

memory array; and Burst mode Read and Write from any

address location of the PSRAM. The Burst modes allow

the devices to Read or Write sequential data with

significantly shorter latency delays than during a random

read or write.

To protect against inadvertent write, the flash memory bank

offers an expanded Block Locking scheme. Each block can

be individually locked, and the top or bottom 8 KWord

parameter blocks of each boot block can be individually

locked for finer granularity. In addition, a 136-words Security

ID, included on the flash memory, increases system design

security.

Designed, manufactured, and tested for applications

requiring low power and small form factor the

SST34WA32A3/32A4/3283/3284

extended temperature with a small footprint package to

meet board space constraints requirement. See Figure 8

for pin assignments.

– Continuous, Sequential Linear Burst

– 8/16/32-words with Wrap-Around Burst

– 8/16/32-words without Wrap-Around Burst

– Burst Access Time: 13.5 ns/11.5 ns

– Asynchronous Random Address Access: 70 ns

– Continuous, Sequential Linear Burst

– 4/8/16-words with Wrap-Around Burst

– 4/8/16-words without Wrap-Around Burst

– Burst Access Time: 13.5 ns/11.5 ns

– Asynchronous Random Address Access: 70 ns

– Word Program Time: 10 µs

– Sector/Block Erase Time: 15 ms

– Chip Erase Time: 30 ms

– All blocks locked at Power-up

– Any block can be locked/unlocked by software

– 128-bit unique ID – factory preset

– 128-word non-erasable, lockable User-programmed

– Data# Polling

– Toggle bit

– 56-ball VFBGA (6 x 8mm)

– Endurance per sector: 1,000,000 cycles (typical)

– Greater than 100 years Data Retention

ID bits (“OTP-like”)

CSF and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Advance Information

are

offered

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