S10942-01CT Hamamatsu Photonics, K.K.,, S10942-01CT Datasheet - Page 2

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S10942-01CT

Manufacturer Part Number
S10942-01CT
Description
Si Photodiode
Manufacturer
Hamamatsu Photonics, K.K.,
Datasheet
Spectral response
Terminal capacitance vs. reverse voltage
Dimensional outline (uint: mm)
Since this photodiode has sensitivity
in the infrared region, infrared light
must be fi ltered out as needed.
100 pF
100 fF
Photosensitive
surface
10 pF
1 pF
0.5
0.4
0.3
0.2
0.1
0
200 300 400 500 600 700 800 900 1000 1100
0.1
Recommended land pattern
Blue
*
0.65
2
Green
3.0*
G
B
R
1.5
Si photodiode
1
0.65
Reverse voltage (V)
Wavelength (nm)
1
(3 ×) anode
index
10
Red
(Typ. Ta=25 °C)
(Typ. Ta=25 °C)
0.62
Tolerance unless otherwise noted: ±0.2
Chip position accuracy with respect to the
package dimensions marked *
X, Y ±0.3
Values in parentheses indicate reference value
*2: Do not allow metal/conductive objects to contact the
Packing: reel (3000 pcs/reel)
Anode (green)
Anode (red)
Cathode common
Anode (blue)
part where the wiring is exposed.
Doing so may cause short circuits.
1.5
Electrode
1200
100
0.62
KSPDB0287EA
KSPDB0253EA
1
S10942-01CT
G
B
R
Active area
1.0
KSPDA0186EA
Dark current vs. reverse voltage
100 pA
100 fA
10 pA
10 fA
1 pA
0.01
0.1
Reverse voltage (V)
1
(Typ. Ta=25 °C)
10
100
KSPDB0252EA
2

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