c505rt290-s0200 Cree, Inc., c505rt290-s0200 Datasheet

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c505rt290-s0200

Manufacturer Part Number
c505rt290-s0200
Description
Razerthin Leds
Manufacturer
Cree, Inc.
Datasheet
RazerThin
CxxxRT290-S0200
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward
voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs
include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
CxxxRT290-S0200 Chip Diagram
Top View
Thin 95 μm Chip
Reduced Forward Voltage
RazerThin LED Performance
Single Wire Bond Structure
Class 2 ESD Rating
3.2 V Typical at 20 mA
460nm - 3.8-11.1 mW
470nm - 3.4-10.4 mW
505nm - 2.0-6.5 mW
527nm - 1.7-6.0 mW
®
G•SiC LED Chip
270 x 270 μm
Mesa (junction)
246 x 246 μm
Gold Bond Pad
110 μm Diameter
LEDs
Subject to change without notice.
www.cree.com
Bottom View
APPLICATIONS
Mobile Phone Key Pads
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliances
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
White LEDs
Blue LEDs
Green LEDs
SiC Substrate
Backside
Metallization
h = 95 μm
Cathode (-)
Anode (+)
Die Cross Section
InGaN


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c505rt290-s0200 Summary of contents

Page 1

RazerThin LEDs ® CxxxRT290-S0200 Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green LEDs. These vertically structured LED ...

Page 2

... Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at T Part Number C460RT290-S0200 C470RT290-S0200 C505RT290-S0200 C527RT290-S0200 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μ ...

Page 3

... Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. 3 CPR3CL Rev. B C460RT290-S0200 C460RT290-0206 C460RT290-0207 C460RT290-0202 C460RT290-0203 460 nm Dominant Wavelength C470RT290-S0200 C470RT290-0206 C470RT290-0207 C470RT290-0202 C470RT290-0203 470 nm Dominant Wavelength C505RT290-S0200 C505RT290-0203 C505RT290-0204 C505RT290-0201 C505RT290-0202 500 nm 505 nm Dominant Wavelength C527RT290-S0200 C527RT290-0205 C527RT290-0202 525 nm 530 nm Dominant Wavelength C460RT290-0208 C460RT290-0204 462.5 nm ...

Page 4

... Relative Intensity vs Forward Current 140 120 100 If(mA) Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. 4 CPR3CL Rev. B 12.00 10.00 8.00 6.00 4.00 2.00 0.00 -2.00 0 -4.00 3 ...

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