Ordering number : ENN7358
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : AL
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
•
•
•
•
Low-frequency Amplifier, high-speed switching,
small motor drive.
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
R CE (sat) typ=580m [I C =0.7A, I B =35mA].
Small ON-resistance (Ron).
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
Tj
f T
General-Purpose Amplifier Applications
Mounted on a ceramic board (600mm
V CB =- -30V, I E =0
V EB =- -4V, I C =0
V CE =- -2V, I C =--10mA
V CE =- -10V, I C =--50mA
V CB =- -10V, f=1MHz
I C =--200mA, I B =--10mA
I C =--200mA, I B =--10mA
30A02CH
Conditions
Package Dimensions
unit : mm
2150A
Conditions
1
3
PNP Epitaxial Planar Silicon Transistor
2
2.9
1.9
0.8mm)
2
0.4
[30A02CH]
min
Low-Frequency
200
O3003 TS IM TA-100124
Ratings
typ
0.15
--110
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
Ratings
--0.9
520
4.7
30A02CH
Continued on next page.
--55 to +150
0.05
max
--700
--100
--100
--220
--1.4
700
150
--1.2
--30
--30
500
--5
No.7358-1/4
MHz
Unit
mW
Unit
mA
mV
nA
nA
pF
V
V
V
A
V
C
C