unr9214j Panasonic Corporation of North America, unr9214j Datasheet

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unr9214j

Manufacturer Part Number
unr9214j
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
unr9214j0L
Manufacturer:
PANASONIC
Quantity:
5 135
Part Number:
unr9214j0L
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors with built-in Resistor
UNR921xJ Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: January 2004
• Costs can be reduced through downsizing of the equipment and
• SS-Mini type package, allowing automatic insertion through tape
• UNR9210J (UN9210J)
• UNR9211J (UN9211J)
• UNR9212J (UN9212J)
• UNR9213J (UN9213J)
• UNR9214J (UN9214J)
• UNR9215J (UN9215J)
• UNR9216J (UN9216J)
• UNR9217J (UN9217J)
• UNR9218J (UN9218J)
• UNR9219J (UN9219J)
• UNR921AJ
• UNR921BJ
• UNR921CJ
• UNR921DJ (UN921DJ)
• UNR921EJ (UN921EJ)
• UNR921FJ (UN921FJ)
• UNR921KJ (UN921KJ)
• UNR921LJ (UN921LJ)
• UNR921MJ
• UNR921NJ
• UNR921TJ (UN921TJ)
• UNR921VJ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts.
packing.
Parameter
Marking Symbol (R
8F
8X
8Z
8M
8O
8P
8Q
EL
EX
EZ
FD
8L
8A
8B
8C
8D
8E
8H
8I
8K
8Y
8N
Symbol
V
V
0.51 kΩ
T
100 kΩ
100 kΩ
4.7 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
P
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
22 kΩ
I
T
CBO
CEO
a
stg
1 kΩ
C
T
j
= 25°C
1
)
−55 to +125
Rating
100
125
125
Note) The part numbers in the parenthesis show conventional part number.
50
50
100 kΩ
5.1 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
SJH00039BED
(R
(UN921xJ Series)
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
0.27
±0.02
(0.50)(0.50)
1.60
1.00
1
3
B
+0.05
–0.03
±0.05
2
R
R
1
2
SSMini3-F1 Package
0.12
C
E
+0.03
–0.01
Unit: mm
1

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unr9214j Summary of contents

Page 1

... SS-Mini type package, allowing automatic insertion through tape packing. ■ Resistance by Part Number Marking Symbol (R • UNR9210J (UN9210J) 8L • UNR9211J (UN9211J) 8A • UNR9212J (UN9212J) 8B • UNR9213J (UN9213J) 8C • UNR9214J (UN9214J) 8D • UNR9215J (UN9215J) 8E • UNR9216J (UN9216J) 8F • UNR9217J (UN9217J) 8H • UNR9218J (UN9218J) 8I • UNR9219J (UN9219J) 8K • ...

Page 2

UNR921xJ Series ■ Electrical Characteristics T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) Collector-emitter cut-off current (Base open) Emitter- UNR9210J/9215J/ 9216J/9217J/921BJ base cut-off UNR9213J/921AJ current UNR9212J/9214J/921DJ/ (Collector 921EJ/921MJ/921NJ/921TJ open) UNR9211J UNR921FJ/921KJ UNR9219J UNR9218J/921CJ/921LJ/921VJ ...

Page 3

... Transistors with built-in Resistor ■ Electrical Characteristics (continued) T Parameter Emitter-base resistance UNR921CJ Rasistance UNR921MJ ratio UNR921NJ UNR9218J/9219J UNR9214J UNR921TJ UNR921FJ UNR921AJ/921VJ UNR9211J/9212J/9213J/921LJ UNR921KJ UNR921EJ UNR921DJ Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  ...

Page 4

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 5

Transistors with built-in Resistor Characteristics charts of UNR9212J  160 = 25° 1 0.9 mA 0.7 mA 0.8 mA 120 0.6 mA 0 0.3 mA 0.2 ...

Page 6

... UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts of UNR9214J  160 = 25° 1 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0 0 ...

Page 7

Transistors with built-in Resistor Characteristics charts of UNR9215J  160 = 25° 1 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0 0.3 mA 0.2 ...

Page 8

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 9

Transistors with built-in Resistor Characteristics charts of UNR9218J  240 = 25° 200 = I 1 0.9 mA 160 0.8 mA 0.7 mA 120 0 0.5 mA 0.4 mA 0.3 ...

Page 10

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 11

Transistors with built-in Resistor Characteristics charts of UNR921BJ  120 = 25° 0 100 ...

Page 12

UNR921xJ Series  MHz = 25° Collector-base voltage V CB Characteristics charts of UNR921DJ  ...

Page 13

Transistors with built-in Resistor Characteristics charts of UNR921EJ  1 25° 0 0.2 mA 0 ...

Page 14

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 15

Transistors with built-in Resistor Characteristics charts of UNR921LJ  240 = 25° 200 160 = I 1 0.8 mA 120 ...

Page 16

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts of ...

Page 17

Transistors with built-in Resistor Characteristics charts of UNR921TJ  160 = 25° 1 0.9 mA 120 0.8 mA 0.7 mA 0.6 mA 0 0.3 mA 0.2 ...

Page 18

UNR921xJ Series  MHz = 25° Collector-base voltage  ...

Page 19

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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