nt1gt72u8pb1bd-2c Nanya Techology, nt1gt72u8pb1bd-2c Datasheet

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nt1gt72u8pb1bd-2c

Manufacturer Part Number
nt1gt72u8pb1bd-2c
Description
240pin Ddr2 Sdram Fully Buffered Dimm Based On 64mx8 & 128mx4 Ddr2 Sdram - B Die
Manufacturer
Nanya Techology
Datasheet
NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C
512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72
240pin DDR2 SDRAM Fully Buffered DIMM
Features
• 512MB 64Mx72 DDR2 Fully Buffered DIMM based on 64Mx8
• 1GB 128Mx72 DDR2 Fully Buffered DIMM based on 64Mx8
• 2GB 256Mx72 DDR2 Fully Buffered DIMM based on 128Mx4
• JEDEC Standard 240-pin Fully Buffered ECC Dual In-Line
• Performance:
• Inputs and outputs are SSTL-18 compatible.
• V
Description
NT512T72U89B1BD-2C, NT1GT72U8PB1BD-2C, and NT2GT72U4NB1BD-2C are Fully Buffered 240-Pin Double Data Rate 2 (DDR2)
Synchronous DRAM Dual In-Line Memory Module (DIMM) with
ranks of 128Mx72, and 256Mx72 high-speed memory array. The module uses nine 64Mx8 (512MB), eighteen 64Mx8 (1GB), and
thirty-six 128Mx4 (2GB) DDR2 SDRAMs in BGA packages. These DIMMs are manufactured using raw cards developed for broad
industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA
DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint. The DIMM is intended
for use in applications operating up to 400MHz clock speeds and achieves high-speed data transfer rates of up to 800 MHz.
REV 1.0
09/2007
Speed Sort
DRAM
DIMM
Channel Clock
DRAM Clock
DDR2 SDRAM (NT5TU64M8BE-25C).
DDR2 SDRAM (NT5TU64M8BE-25C).
DDR2 SDRAM (NT5TU128M4BE-25C).
Memory Module.
DD
= 1.8Volt ± 0.1, V
FBDIMM
Latency
DDQ
DDR2-800
PC2-6400
-2C
200
400
= 1.8Volt ± 0.1.
5
MHz
MHz
Unit
t
CK
Intel designed Heat
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Based on 64Mx8 & 128Mx4 DDR2 SDRAM - B die
• Host Interface and AMB component industry standard
compliant.
• Support SMBus protocol interface for access to the AMB
configuration registers.
• Detects errors on the channel and reports them to the host
memory controller.
• Automatic DDR2 DRAM Bus Calibration.
• Full Host Control of the DDR2 DRAMs.
• Over-Temperature Detection and Alert.
• MBIST & IBIST Test Functions.
• Transparent Mode for DRAM Test Support.
• Serial Presence Detect (SPD)
• Gold contacts
• RoHS Compliance
• SDRAM in 60-ball BGA Package
Spreader, organized as one rank on 64Mx72; two
© NANYA TECHNOLOGY CORP.

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nt1gt72u8pb1bd-2c Summary of contents

Page 1

... DD DDQ Description NT512T72U89B1BD-2C, NT1GT72U8PB1BD-2C, and NT2GT72U4NB1BD-2C are Fully Buffered 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Dual In-Line Memory Module (DIMM) with ranks of 128Mx72, and 256Mx72 high-speed memory array. The module uses nine 64Mx8 (512MB), eighteen 64Mx8 (1GB), and thirty-six 128Mx4 (2GB) DDR2 SDRAMs in BGA packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Ordering Information Part Number AMB NT2GT72U4NB1BD-2C IDT C1-800 NT1GT72U8PB1BD-2C NT512T72U89B1BD-2C Note: Module revision will change if AMB, PCB, or Heat spreader version changes. Example: REV 1.0 09/2007 Speed 400MHz DDR2-800 PC2-6400 (2.5ns @ NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 3

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 DIMM Connector Pin Description Pin Name Pin Description SCK System Clock Input, positive line System Clock Input, negative line PN0-PN13 Primary Northbound Data, positive lines - Primary Northbound Data, negative lines PS0-PS9 Primary Southbound Data, positive lines ...

Page 4

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 DDR2 240-pin FBDIMM Pinout Pin Front Side Pin Front Side RFU RFU PN12 ...

Page 5

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Functional Block Diagram (512MB, 1Rank, 64Mx8 DDR2 SDRAMs) REV 1.0 09/2007 5 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 6

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Functional Block Diagram (1GB, 2Ranks, 64Mx8 DDR2 SDRAMs $%& # $%& # $%& #2 $%& $%& $%& $%& $%& $%& $%& #1 $%& # $%& # $%& $%& $%& $%& $%& ...

Page 7

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Functional Block Diagram (2GB, 2Ranks, 128Mx4 DDR2 SDRAMs) REV 1.0 09/2007 7 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 8

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 DC Electrical Characteristics and Operating Conditions ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter V AMB supply Voltage CC V Supply Voltage DD V EEPROM supply Voltage DDSPD V Supply Voltage for DLL DDL V Supply Voltage for Output ...

Page 9

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Serial Presence Detect -- Part Byte Description 0 Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage 1 SPD Revision 2 Key Byte / DRAM Device Type 3 Voltage Levels of this Assembly 4 SDRAM Addressing 5 Module Physical Attributes ...

Page 10

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Serial Presence Detect – Part Byte Description DT5B: Case temperature rise from ambient due to IDD5B/burst refresh 40 operation DT7: Case temperature rise from ambient due to IDD7/bank interleave 41 read mode operation 42-78 Reserved 79 ODT termination ...

Page 11

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Operating, Standby, and Refresh Currents (Test condition: Vdd=1.8V, Vcc=1.5V, Room temperature) Symbol Parameter/Condition Idd_Idle_0 Idle Current, single or last DIMM. L0 state, idle (0BW). Primary channel enabled; Secondary Channel disabled. Command and Icc_Idle_0 address lines stable, DRAM clock active. CKE high. ...

Page 12

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Average clock period t CK Average clock high-level width t CH Average clock low-level width t CL Average command to DQS associated clock ...

Page 13

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Exit self refresh to a Non-read command t XSNR Exit self refresh to a Read command t XSRD Exit precharge power down to any Non- read ...

Page 14

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Package Dimensions 4 3"4 "5 "5 >% REV 1.0 09/2007 22"25 >% " "6 >% " " " 14 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. @ " 6"6 " >% " © NANYA TECHNOLOGY CORP. ...

Page 15

... NT512T72U89B1BD-2C / NT1GT72U8PB1BD-2C / NT2GT72U4NB1BD-2C 512MB: 64Mx72 / 1GB: 128Mx72 / 2GB: 256Mx72 Revision Log Rev Date 0.1 09/2007 Preliminary Release. 1.0 09/2007 Official Release. REV 1.0 09/2007 Modification 15 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. © NANYA TECHNOLOGY CORP. ...

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