nt1gc64bh4b0pf Nanya Techology, nt1gc64bh4b0pf Datasheet

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nt1gc64bh4b0pf

Manufacturer Part Number
nt1gc64bh4b0pf
Description
Unbuffered Ddr3 Sdram Dimm
Manufacturer
Nanya Techology
Datasheet
NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
Based on DDR3-1066/1333 128Mx16 (1GB) / 256Mx8 (2GB/4GB) SDRAM B-Die
Features
•Performance:
DIMM CAS Latency
fck – Clock Frequency
tck – Clock Cycle
fDQ – DQ Burst Frequency
• 240-Pin Dual In-Line Memory Module (UDIMM)
• 128Mx64 (1GB) / 256Mx64 (2GB) / 512Mx64 (4GB) DDR3
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
• Nominal and Dynamtic On-Die Termination support
• Halogen free product
Description
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GC64B8HB0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered
Dual In-Line Memory Module (UDIMM), organized as one rank of 128Mx64 (1GB) / 256Mx64 (2GB) and two ranks of 512Mx64 (4GB)
high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA packaged devices and eight 256Mx8 (2GB) 78-ball BGA
packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed
for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All
NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A13 (1GB) / A0-A14 (2GB/4GB) and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
05/2010
Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die
devices.
clock edge
DD
= V
Speed Sort
DDQ
= 1.5V ±0.075V
PC3-8500
1.875
1066
-BE
533
7
PC3-10600
1333
-CG
667
1.5
9
Mbps
MHz
Unit
ns
1
• Programmable Operation:
• Two different termination values (Rtt_Nom & Rtt_WR)
• 14/10/1 (row/column/rank) Addressing for 1GB
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
•1GB: SDRAMs are in 96-ball BGA Package
• 2GB: SDRAMs are in 78-ball BGA Package
• 4GB: SDRAMs are in 78-ball BGA Package
• RoHS compliance
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION

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nt1gc64bh4b0pf Summary of contents

Page 1

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx16 (1GB) / 256Mx8 (2GB/4GB) SDRAM B-Die Features •Performance: PC3-8500 Speed Sort -BE DIMM CAS Latency 7 fck – Clock Frequency 533 tck – Clock Cycle 1.875 fDQ – ...

Page 2

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Ordering Information Part Number NT1GC64BH4B0NF-BE DDR3-1066 NT1GC64BH4B0NF-CG DDR3-1333 PC3-10600 NT2GC64B88B0NF-BE DDR3-1066 NT2GC64B88B0NF- CG DDR3-1333 PC3-10600 NT4GC64B8HB0NF-BF DDR3-1066 NT4GC64B8HB0NF -CG DDR3-1333 PC3-10600 Pin Description Pin Name ...

Page 3

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin 1 V 121 V 31 REFDQ 122 DQ4 DQ0 123 DQ5 33 4 DQ1 124 ...

Page 4

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active  ...

Page 5

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Functional Block Diagram – [1GB 1 Rank, 128Mx16 DDR3 SDRAMs] DQS0 LDQS ZQ  L DM0 LDM DQ[0:7] DQ[0:7] DQS1 UDQS  ...

Page 6

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Functional Block Diagram – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs]   DQS0 DM0  DM DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 ...

Page 7

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Functional Block Diagram – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs]    DQS0 DM0 DM CS DQS DQS DQ0 ...

Page 8

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Serial Presence Detect [NT1GC64BH4B0PF, 1GB – 1 Rank, 128Mx16 DDR3 SDRAMs] Byte 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) ...

Page 9

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Serial Presence Detect [NT2GC64B88B0NF, 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs] Byte 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) ...

Page 10

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Serial Presence Detect [NT4GC64B8HB0NF, 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] Byte 0 CRC range, EEPROM bytes, bytes used 1 SPD revision 2 DRAM device type 3 Module type (form factor) ...

Page 11

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Environmental Requirements Symbol Module Operating Temperature Range (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature (Plastic) T STG Storage Humidity (without condensation) H STG Barometric Pressure (operating & storage) ...

Page 12

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM DC Electrical Characteristics and Operating Conditions Symbol Parameter V Supply Voltage DD V Output Supply Voltage DDQ Note: 1. Under all conditions VDDQ must be less than or equal to VDD. ...

Page 13

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs ° ° CASE DDQ DD Symbol IDD0 Operating One Bank Active-Precharge Current ...

Page 14

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Standard Speed Bins DDR3-1066MHz Speed Bin CL-nRCD-nRP Parameter Symbol Internal read command to first data tAA ACT to internal read or write delay time tRCD PRE command period ...

Page 15

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width ...

Page 16

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time ...

Page 17

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...

Page 18

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width ...

Page 19

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time ...

Page 20

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) ...

Page 21

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Package Dimensions [NT1GC64BH4B0PF, 1GB – 1 Rank, 128Mx16 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. REV 1.0 ...

Page 22

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Package Dimensions [NT2GC64B88B0NF, 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters REV 1.0 05/2010 FRONT 133.35 +/- 0.15 Detail A 71.00 5.00 BACK Detail B 0.80 +/- 0.05 1.00 Pitch 22 NANYA reserves the right to change products and specifications without notice. ...

Page 23

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Package Dimensions [NT4GC64B8HB0NF, 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. REV 1.0 ...

Page 24

... NT1GC64BH4B0PF / NT2GC64B88B0NF / NT4GC64B8HB0NF 1GB: 128M 2GB: 256M 4GB: 512M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Revision Log Rev Date 0.1 01/2010 Preliminary Release 0.5 05/2010 Preliminary Release 2 1.0 05/2010 Official Release Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd., Kueishan, Taoyuan, 333, Taiwan, R ...

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