nt1gd64s8hb0fm Nanya Techology, nt1gd64s8hb0fm Datasheet

nt1gd64s8hb0fm

Manufacturer Part Number

nt1gd64s8hb0fm

Description

200 Pin Unbuffered Ddr So-dimm Based On Ddr333 512mb Bit B Die Device

Manufacturer

Nanya Techology

Datasheet

1.NT1GD64S8HB0FM.pdf (18 pages)

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NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM

NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN

1GB, 512MB and 256MB

PC2700

200 pin Unbuffered DDR SO-DIMM

Based on DDR333 512Mb bit B Die device

Features

• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• Unbuffered DDR SO-DIMM based on 110nm 512M bit die B

device, organized as 64Mx8 and 32Mx16 DDR SDRAM

• Performance:

• Intended for 166 MHz applications

• Inputs and outputs are SSTL-2 compatible

• V

• SDRAMs have 4 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

Description

NT1GD64S8HB0FM, NT512D64SH8B0GM, NT256D64SH4B0GM, NT1GD64S8HB0FN, NT512D64SH8B0GN, and NT256D64SH4B0GN

are un-buffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM). All devices

on these modules are based on Nanya’s 110nm die B generation of 512M bit devices. NT1GD64S8HB0FN, NT512D64SH8B0GN and

NT256D64SH4B0GN are the corresponding part numbers that are in “Green” packaging and they are identical in both physical and

electrical characteristics as non-green parts.

The NT1GD64S8HB0FM and NT1GD64S8HB0FN are organized as two ranks of 64Mx64 high-speed memory array and use sixteen

64Mx8 DDR SDRAMs BGA packages. The NT512D64SH8B0GM and NT512D64SH8B0GN are organized as two ranks of 32Mx64

high-speed memory array and use eight 32Mx16 DDR SDRAMs TSOP packages. The NT256D64SH4B0GM and NT256D64SH4B0GN are

organized a single rank of 32Mx64 high-speed memory array and use four 32Mx16 DDR SDRAMs TSOP packages.

The DIMMs are intended for use in applications operating up to 166 MHz clock speeds and achieves high-speed data transfer rates of up to

333 MHz. Prior to any access operation, the device

by address inputs and I/O inputs BA0 and BA1 using the mode register set cycle.

The SO-DIMM uses a serial EEPROM and through the use of a standard IIC protocol the serial presence-detect implementation (SPD) data

can be accessed. The first 128 bytes of the SPD data are programmed with the module characteristics as defined by JEDEC.

REV 1.3

Nov 17, 2005

DIMM

= V

Clock Frequency

Clock Cycle

DQ Burst Frequency

DDQ

Speed Sort

= 2.5V ± 0.2V

Latency

PC2700

166

333

2.5

MHz

Unit

latency and burst type/ length/operation type must be programmed into the DIMM

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

• Programmable Operation:

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect EEPROM

• Gold contacts on module PCB

• Available in “Green” packaging (lead & halogen free)

clock edge

- DIMM

- Burst Type: Sequential or Interleave

- Burst Length: 2, 4, 8

- Operation: Burst Read and Write

NANYA reserves the right to change products and specifications without notice.

Latency: 2, 2.5

Related parts for nt1gd64s8hb0fm

nt1gd64s8hb0fm Summary of contents

Page 1

... NT256D64SH4B0GN are the corresponding part numbers that are in “Green” packaging and they are identical in both physical and electrical characteristics as non-green parts. The NT1GD64S8HB0FM and NT1GD64S8HB0FN are organized as two ranks of 64Mx64 high-speed memory array and use sixteen 64Mx8 DDR SDRAMs BGA packages. The NT512D64SH8B0GM and NT512D64SH8B0GN are organized as two ranks of 32Mx64 high-speed memory array and use eight 32Mx16 DDR SDRAMs TSOP packages ...

Page 2

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Ordering Information Part Number Size NT1GD64S8HB0FM-6K 128Mx64 NT512D64SH8B0GM-6K 64Mx64 NT256D64SH4B0GM-6K 32Mx64 “Green” Part Number Size NT1GD64S8HB0FN-6K 128Mx64 NT512D64SH8B0GN-6K 64Mx64 NT256D64SH4B0GN-6K 32Mx64 For the closest sales office or information, please visit: Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd ...

Page 3

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Pin Description CK0, CK1, CK2, Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9, A11, A12 Address Inputs A10/AP Address Input/Auto-precharge BA0, BA1 ...

Page 4

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Input/Output Functional Description Symbol Type Polarity CK0, CK1, CK2, Cross (SSTL) point , , Active CKE0, CKE1 (SSTL) High Active , (SSTL) Low Active , , (SSTL) Low V Supply REF V Supply DDQ BA0, BA1 (SSTL ...

Page 5

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Functional Block Diagram 2 Ranks, 16 devices, 64Mx8 DDR SDRAMs (1GB) DQS0 DM0 DM DQS DM DQ0 I/O 7 I/O 0 DQ1 I/O 6 I/O 1 DQ2 I/O 1 I/O 6 DQ3 I I/O 7 DQ4 I/O 5 I/O 2 DQ5 I/O 4 I/O 3 DQ6 I/O 3 I/O 4 DQ7 I/O 2 I/O 5 DQS1 DM1 DM DQS ...

Page 6

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Functional Block Diagram 2 Ranks, 8 devices, 32Mx16 DDR SDRAMs (512MB) LDQS LDQS DQS0 DM0 LDM LDM DQ0 I/O 0 I/O 0 DQ1 I/O 1 I/O 1 DQ2 I/O 2 I/O 2 DQ3 I/O 3 I/O 3 DQ4 I/O 4 I/O 4 DQ5 I/O 5 I/O 5 DQ6 I/O 6 I/O 6 DQ7 I ...

Page 7

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Functional Block Diagram 1 Rank, 4 devices, 32Mx16 DDR SDRAMs (256MB) LDQS DQS0 DM0 LDM DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I UDQS DQS1 DM1 UDM DQ8 I/O 8 I/O 9 DQ9 I/O 10 DQ10 I/O 11 DQ11 ...

Page 8

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Serial Presence Detect Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly 4 Number of Column Addresses on Assembly 5 Number of DIMM Rank 6 Data Width of Assembly 7 Data Width of Assembly (cont’ ...

Page 9

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB SPD Values for NT1GD64S8HB0FM / NT1GD64S8HB0FN PC2700 (6K) Byte Value Hex 0 128 80 1 256 08 2 SDRAM DDR x64 40 7 x64 00 8 SSTL 2. 6.0ns 60 10 7.0ns 70 11 Non-Parity ...

Page 10

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB SPD Values for NT512D64SH8B0GM / NT512D64SH8B0GN PC2700 (6K) Byte Value Hex 0 128 80 1 256 08 2 SDRAM DDR x64 40 7 x64 00 8 SSTL 2. 6.0ns 60 10 7.0ns 70 11 Non-Parity ...

Page 11

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB SPD Values for NT256D64SH4B0GM / NT256D64SH4B0GN PC2700 (6K) Byte Value Hex 0 128 80 1 256 08 2 SDRAM DDR x64 40 7 x64 00 8 SSTL 2. 6.0ns 60 10 7.0ns 70 11 Non-Parity ...

Page 12

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Absolute Maximum Ratings Symbol Voltage on I/O pins relative OUT V Voltage on Input relative Voltage on V supply relative Voltage on V supply relative to V DDQ DDQ T Operating Temperature (Ambient) ...

Page 13

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB AC Characteristics Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating Conditions, Operating, Standby, and Refresh Currents, and Electrical Characteristics and AC Timing.) 1. All voltages referenced Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified ...

Page 14

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Operating, Standby, and Refresh Currents ° ° 2.5V ± 0.2V A DDQ DD Symbol Operating Current: one bank; active/precharge; t IDD0 clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank; active/read/precharge; Burst = 2; t ...

Page 15

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Package Dimensions Non-ECC, 16 BGA devices, NT1GD64S8HB0FM / NT1GD64S8HB0FN (2X)Θ 1. 2.15 11.40 4.20 1.80 Detail A 4.00+/-0.10 1.00+/- 0.1 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. Units: Millimeters (Inches) Note: Devices are not to scale and are there as references only. ...

Page 16

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Package Dimensions Non-ECC, 8 TSOP devices, NT512D64SH8B0GM / NT512D64SH8B0GN (2X)Θ 1. 2.15 11.40 4.20 1. Detail A 4.00+/-0.10 1.00+/- 0.1 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. Units: Millimeters (Inches) Note: Devices are not to scale and are there as references only. ...

Page 17

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Package Dimensions Non-ECC, 4 TSOP devices, NT256D64SH40GM / NT256D64SH40GN (2X)Θ 1. 2.15 11.40 4.20 1. Detail A 4.00+/-0.10 1.00+/- 0.1 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. Units: Millimeters (Inches) Note: Devices are not to scale and are there as references only. ...

Page 18

... NT1GD64S8HB0FM / NT512D64SH8B0GM / NT256D64SH4B0GM NT1GD64S8HB0FN / NT512D64SH8B0GN / NT256D64SH4B0GN 1GB, 512MB and 256MB Revision Log Rev Date Initial release: 1GB: NT1GD64S8HB0GM – 75B/6K 0.1 May 11, 2004 512MB: NT512D64SH8B0FM – 75B/6K 256MB: NT256D64SH4B0FM – 75B/6K Corrected part numbers as: NT1GD64S8HB0FM 0.2 Sep 2, 2004 NT512D64SH8B0GM NT256D64SH4B0GM Updated IDD 333 and SPD values for all modules 1 ...

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