nt2gtt64u88b0un Nanya Techology, nt2gtt64u88b0un Datasheet

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nt2gtt64u88b0un

Manufacturer Part Number
nt2gtt64u88b0un
Description
Pc2-4200/pc2-5300/pc26400 Unbuffered Ddr2 So-dimm 
Manufacturer
Nanya Techology
Datasheet
NT2GTT64U88B0UN / NT2GTT64U88B0US
2GB : 256M x 64
PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM
200 pin Unbuffered DDR2 SO-DIMM
Based on 2x128Mx8 (Stacking) DDR2 SDRAM
Features
• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)
• 256Mx64 Unbuffered DDR2 SO-DIMM based on 2 ranks of
128Mx8 DDR2 SDRAM device.
• Performance:
• Intended for 266MHz, 333MHz and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
Description
NT2GTT64U88B0UN and NT2GTT64U88B0US are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline
Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 256Mx64 high-speed memory array. Modules use eight 256Mx8
(2x128Mx8) 71-ball stacked BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as
reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM
DIMMs provide a high-performance, flexible 8-byte interface in a 2.66” long space-saving footprint.
The DIMM is intended for use in applications operating up to 266MHz (333MHz or 400MHz) clock speeds and achieves high-speed data
transfer rates of up to 533MHz (667MHz or 800 MHz). Prior to any access operation, the device
type must be programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD
data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
Ordering Information
REV 1.3
10/2007
f
t
f
CK
CK
DQ
NT2GTT64U88B0UN –37B DDR2-533 PC2-4200 266MHz (3.75ns @ CL = 4)
NT2GTT64U88B0UN –3C
NT2GTT64U88B0US –3C
NT2GTT64U88B0UN –25D
NT2GTT64U88B0US –25D
DD
DIMM
= V
Clock Frequency
Clock Cycle
DQ Burst Frequency
Speed Sort
DDQ
Part Number
= 1.8V ± 0.1V
Latency
PC2-4200 PC2-5300 PC2-6400
3.75
37B
266
533
DDR2-667 PC2-5300 333MHz (3.0ns @ CL = 5)
DDR2-800 PC2-6400 400MHz (2.5ns @ CL =6)
4
333
667
3C
5
3
25D
400
800
2.5
6
Speed
MHz
MHz
Unit
ns
1
• Address and control signals are fully synchronous to positive
• Programmable Operation:
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 71-ball stacked BGA Package
• RoHS Compliance
• Halogen free - NT2GTT64U88B0US
clock edge
- DIMM
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
Latency: 3, 4, 5 (-37B/-3C); 4, 5, 6 (-25D)
Organization
256Mx64
latency and burst/length/operation
© NANYA TECHNOLOGY CORPORATION
Power
1.8V
Leads
Gold
Green
Note

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nt2gtt64u88b0un Summary of contents

Page 1

... DRAM DLL aligns DQ and DQS transitions with clock transitions. Description NT2GTT64U88B0UN and NT2GTT64U88B0US are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 256Mx64 high-speed memory array. Modules use eight 256Mx8 (2x128Mx8) 71-ball stacked BGA packaged devices ...

Page 2

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Pin Description CK0-CK1 Differential Clock Inputs - CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9, A11-A13 Address Inputs A10/AP Column Address Input/Auto-precharge BA0, BA1 SDRAM Bank Address Inputs ...

Page 3

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Input/Output Functional Description Symbol Type Polarity Cross CK0-CK1, - (SSTL) Point Active CKE0, CKE1 (SSTL) High Active (SSTL) Low Active , , (SSTL) Low V Supply REF Active ODT0, ODT1 Input High BA0 - BA2 (SSTL ...

Page 4

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Functional Block Diagram (2GB, 2Ranks, x8 DDR2 SDRAMs) REV 1.3 10/2007 4 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...

Page 5

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (Part Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type 3 Number of Row Addresses on Assembly 4 Number of Column Addresses on Assembly 5 Number of DIMM Ranks ...

Page 6

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (Part Byte Description 42 Min. Auto Refresh Command Cycle Time (t 43 Maximum Clock Cycle Time ( Max. DQS-DQ Skew Factor (t ) DQS 45 Read Data Hold Skew Factor (t ) QHS 46-61 Reserved 62 SPD Revision ...

Page 7

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Absolute Maximum DC Ratings Symbol Voltage on I/O pins relative to Vss OUT Voltage on VDD pins relative to Vss V DD Voltage on VDDQ pins relative to Vss V DDQ Voltage on VDDL pins relative to Vss V DDL Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 8

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V [2GB, 2 Ranks, 128Mx8 DDR2 SDRAMs] CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t IDD0 DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank ...

Page 9

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter Clock Cycle Time t CK Clock Cycle Time (Average high-level width low-level width CL WL ...

Page 10

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t Exit active power down to read command XARD t Exit active power down to read command XARDS t ODT turn-on delay ...

Page 11

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Package Dimensions (2GB, 2Ranks, x8 DDR2 SDRAMs) # " (,- . / REV 1.3 10/2007 &' ! " NANYA reserves the right to change products and specifications without notice. * © NANYA TECHNOLOGY CORPORATION ...

Page 12

... NT2GTT64U88B0UN / NT2GTT64U88B0US 2GB : 256M x 64 PC2-4200/PC2-5300/PC26400 Unbuffered DDR2 SO-DIMM Revision Log Rev Date 0.1 12/2006 Preliminary release. 1.0 05/2007 Official Released. 1.1 07/2007 Added DDR2-800 (-25D) item information 1.2 09/2007 Added Halogen free part numbers 1.3 10/2007 Update Halogen free part numbers Nanya Technology Corporation Hwa Ya Technology Park 669 Fu Hsing 3rd Rd ...

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