nt2gc72c89b0nf Nanya Techology, nt2gc72c89b0nf Datasheet

nt2gc72c89b0nf

Manufacturer Part Number

nt2gc72c89b0nf

Description

Unbuffered Ddr3 Sdram Dimm With Ecc

Manufacturer

Nanya Techology

Datasheet

1.NT2GC72C89B0NF.pdf (18 pages)

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NT2GC72C89B0NF / NT4GC72C8PB0NF

2GB: 256M x 72 / 4GB: 512M x 72

PC3-8500 / PC3-10600

Unbuffered DDR3 SDRAM DIMM with ECC

Based on DDR3-1066/1333 256Mx8 SDRAM B-Die

Features

•Performance:

DIMM CAS Latency

fck – Clock Freqency

tck – Clock Cycle

fDQ – DQ Burst Freqency

• 240-Pin Dual In-Line Memory Module (UDIMM)

• 256Mx72 and 512Mx72 DDR3 Unbuffered DIMM with ECC based

• Intended for 533MHz/667MHz applications

•V

• SDRAMs have 8 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

• Nominal and Dynamic On-Die Termination support

• Halogen free product

Description

NT2GC72C89B0NF and NT4GC72C8PB0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line

Memory Module with ECC (UDIMM w/ ECC), organized as one rank of 256Mx72 (2GB) and two ranks of 512Mx72 (4GB) high-speed

memory array. Modules use nine 256Mx8 (2GB) 78-ball BGA packaged devices and eighteen 256Mx8 (4GB) 78-ball BGA packaged

devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these

common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance,

flexible 8-byte interface in a 5.25” long space-saving footprint.

The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of

1066Mbps/1333Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the

DIMM by address inputs A0-A13 and I/O inputs BA0~BA2 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data

are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

REV 0.1

02/2010

on 256Mx8 DDR3 SDRAM B-Die devices.

clock edge

= V

Speed Sort

DDQ

= 1.35V+0.0675/-0.1V

PC3-8500

1.875

1066

-BE

533

PC3-10600

1333

-CG

667

1.5

Mbps

MHz

Unit

• Programmable Operation:

• Two different termination values (Rtt_Nom & Rtt_WR)

• 14/11/1 (row/column/rank) Addressing for 2GB

• 14/11/2 (row/column/rank) Addressing for 4GB

• Extended operating temperature rage

• Auto Self-Refresh option

• Serial Presence Detect

• Gold contacts

• SDRAMs are in 78-ball BGA Package

• RoHS compliance

- DIMM  Latency: 6,7,8,9

- Burst Type: Sequential or Interleave

- Burst Length: BC4, BL8

- Operation: Burst Read and Write

NANYA reserves the right to change products and specifications without notice.

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