nt2gc64b88g0nf Nanya Techology, nt2gc64b88g0nf Datasheet

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nt2gc64b88g0nf

Manufacturer Part Number
nt2gc64b88g0nf
Description
Unbuffered Ddr3 Sdram Dimm
Manufacturer
Nanya Techology
Datasheet
NT2GC64B88G0NF / NT4GC64B8HG0NF
2GB: 256M x 64 / 4GB: 512M x 64
PC3-10600 / PC3-12800
Unbuffered DDR3 SDRAM DIMM
Based on DDR3-1333/1600 256Mx8 SDRAM G-Die
Features
•Performance:
DIMM CAS Latency
fck – Clock Freqency
tck – Clock Cycle
fDQ – DQ Burst Freqency
• 240-Pin Dual In-Line Memory Module (UDIMM)
• 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based
• Intended for 667MHz/800MHz applications
• Inputs and outputs are SSTL-15 compatible
• V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
• Nominal and Dynamtic On-Die Termination support
Description
NT2GC64B88G0NF / NT4GC64B8HG0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory
Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules use eight
256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured
using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation
between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving
footprint.
The DIMM is intended for use in applications operating of 667MHz/800MHz clock speeds and achieves high-speed data transfer rates of
1333Mbps/12800Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into
the DIMM by address inputs A0-A13 (2GB) / A0-A14 (4GB) and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.0
05/2011
on 256Mx8 DDR3 SDRAM G-Die devices.
clock edge
DD
= V
Speed Sort
DDQ
= 1.5V ±0.075V
PC3-10600
1333
-CG
667
1.5
9
PC3-12800
1600
1.25
800
-DI
11
Mbps
MHz
Unit
ns
1
• Programmable Operation:
• Two different termination values (Rtt_Nom & Rtt_WR)
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• SDRAMs are in 78-ball BGA Package
• RoHS compliance and Halogen free product
- DIMM  Latency: 5, 6, 7,8,9,10,11
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
NANYA reserves the right to change products and specifications without notice.
© NANYA TECHNOLOGY CORPORATION

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nt2gc64b88g0nf Summary of contents

Page 1

... Nominal and Dynamtic On-Die Termination support Description NT2GC64B88G0NF / NT4GC64B8HG0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Ordering Information Part Number NT2GC64B88G0NF-CG DDR3-1333 PC3-10600 NT2GC64B88G0NF-DI DDR3-1600 PC3-12800 800MHz (1.25ns @ CL = 11) NT4GC64B8HG0NF-CG DDR3-1333 PC3-10600 NT4GC64B8HG0NF-DI DDR3-1600 PC3-12800 800MHz (1.25ns @ CL = 11) Pin Description Pin Name Description ...

Page 3

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM DDR3 SDRAM Pin Assignment Pin Front Pin Back Pin 1 V 121 V 31 REFDQ 122 DQ4 DQ0 123 DQ5 33 4 DQ1 124 DM0,DQS9 125 ...

Page 4

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Input/Output Functional Description Symbol Type Polarity CK0, CK1 Cross Input ,  point Active CKE0, CKE1 Input High Active ,  ...

Page 5

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Functional Block Diagram – [2GB 1 Rank, 256Mx8 DDR3 SDRAMs]   DQS0 DM0  DM DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 ...

Page 6

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Functional Block Diagram – [4GB 2 Ranks, 256Mx8 DDR3 SDRAMs]    DQS0 DM0 DM CS DQS DQS DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I ...

Page 7

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Environmental Requirements Symbol Module Operating Temperature Range (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature (Plastic) T STG Storage Humidity (without condensation) H STG Barometric Pressure (operating & storage) ...

Page 8

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM DC Electrical Characteristics and Operating Conditions Symbol Parameter V Supply Voltage DD V Output Supply Voltage DDQ Note: 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. ...

Page 9

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Operating, Standby, and Refresh Currents = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs ° ° CASE DDQ DD Symbol Operating One Bank Active-Precharge Current IDD0 Operating One Bank Active-Read-Precharge Current ...

Page 10

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Standard Speed Bins DDR3-1066MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ...

Page 11

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM DDR3-1600MHz Speed Bin CL-nRCD-nRP Parameter Internal read command to first data ACT to internal read or write delay time PRE command period ACT to ACT or REF command period ACT to PRE command period ...

Page 12

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1066MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...

Page 13

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Command and Address Timing DLL locking time Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time ...

Page 14

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...

Page 15

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1333MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...

Page 16

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time Mode Register Set command update delay ...

Page 17

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...

Page 18

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM AC Timing Specifications for DDR3 SDRAM Devices Used on Module (1600MHz) Parameter Clock Timing Minimum Clock Cycle Time (DLL off mode) Average Clock Period Average high pulse width Average low pulse width ...

Page 19

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Internal READ Command to PRECHARGE Command delay Delay from start of internal write transaction to internal read command WRITE recovery time Mode Register Set command cycle time Mode Register Set command update delay ...

Page 20

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Timing of RD/RDA command to Power Down entry Timing of WR command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WRA command to Power Down entry (BL8OTF, BL8MRS, BC4OTF) Timing of WR command to Power Down entry (BC4MRS) ...

Page 21

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Package Dimensions [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters REV 1.0 05/2011 FRONT 133.35 +/- 0.15 Detail A 71.00 5.00 BACK Detail B 0.80 +/- 0.05 1.00 Pitch 21 NANYA reserves the right to change products and specifications without notice. ...

Page 22

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Package Dimensions [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs] 5.175 47.00 Detail A 2.50 1.50 +/- 0.10 Units: Millimeters Note: Device position and scale are only for reference. REV 1.0 05/2011 FRONT 133.35 +/- 0.15 Detail A 71.00 5.00 BACK Detail B 0 ...

Page 23

... NT2GC64B88G0NF / NT4GC64B8HG0NF 2GB: 256M 4GB: 512M x 64 PC3-10600 / PC3-12800 Unbuffered DDR3 SDRAM DIMM Revision Log Rev Date 0.1 04/2011 Preliminary Release 1.0 05/2011 Official Release REV 1.0 05/2011 Modification 23 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...

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