nt256t64uh4a1fy Nanya Techology, nt256t64uh4a1fy Datasheet

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nt256t64uh4a1fy

Manufacturer Part Number
nt256t64uh4a1fy
Description
240pin Unbuffered Ddr2 Sdram Module
Manufacturer
Nanya Techology
Datasheet
NT256T64UH4A1FY
256MB: 32M x 64
Unbuffered DDR2 SDRAM DIMM
240pin Unbuffered DDR2 SDRAM MODULE
Based on 32Mx16 DDR2 SDRAM
Features
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2
• Performance:
• Intended for 333MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble and
• Address and control signals are fully synchronous to positive
Description
NT256T64UH4A1FY is 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM),
organized as a one-rank 64Mx64 high-speed memory array. Modules use four 32Mx16 DDR2 SDRAMs in FBGA packages. These
DIMMs manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files
minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface
in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 333MHz clock speeds and achieves high-speed data transfer rates of up to
667MHz. Prior to any access operation, the device
DIMM by address inputs A0-A13 and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
Ordering Information
REV 1.3
08/2006
f
f
t
CK
CK
DQ
one-half clock post-amble
SDRAM
NT256T64UH4A1FY-3C
DD
DIMM
= V
Clock Frequency
Clock Cycle
DQ Burst Frequency
Speed Sort
Part Number
DDQ
= 1.8Volt ± 0.1
Latency
*
PC2-5300
333
667
-3C
5
3
333MHz (3ns @ CL = 5)
MHz
MHz
Unit
ns
latency and burst type/ length/operation type must be programmed into the
Speed
DDR2-667
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
• Write Latency = Read Latency - 1
• Programmable Operation:
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/2 Addressing (row/column/bank)
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• On Die Termination (ODT)
• Gold contacts
• SDRAMs in 84-ball FBGA Package
• RoHS Compliance
clock edge
- Device
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
PC2-5300
Latency: 3, 4, 5
Organization
32Mx64
Leads
Gold
© NANYA TECHNOLOGY CORP.
Power
1.8V
Green
Note

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nt256t64uh4a1fy Summary of contents

Page 1

... Address and control signals are fully synchronous to positive Description NT256T64UH4A1FY is 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as a one-rank 64Mx64 high-speed memory array. Modules use four 32Mx16 DDR2 SDRAMs in FBGA packages. These DIMMs manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Pin Description CK0, Differential Clock Inputs CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects A0-A9, A11-A13 Address Inputs A10/AP Column Address Input/Auto-precharge BA0, BA1 SDRAM Bank Address Inputs ...

Page 3

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Pinout Pin Front Pin Front REF DQ0 DQ1 DQS0 DQ2 DQ3 51 V DDQ ...

Page 4

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active , (SSTL) Low Active , , (SSTL) Low V Supply REF V Supply DDQ Active ODT0, ODT1 ...

Page 5

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (256MB, 1 Rank, 32Mx16 DDR SDRAMs) DQS0 LDQS DM0 LDM DQ0 I/O 0 DQ1 I/O 1 DQ2 I/O 2 DQ3 I/O 3 DQ4 I/O 4 DQ5 I/O 5 DQ6 I/O 6 DQ7 I/O 7 DQS1 D0 UDQS DM1 UDM DQ8 I/O 8 DQ9 I/O 9 DQ10 I/O 10 DQ11 I/O 11 DQ12 I/O 12 DQ13 I/O 13 DQ14 I/O 14 DQ15 I/O 15 DQS2 ...

Page 6

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- Part 32Mx64 1 BANK UNBUFFERED DDR2 SDRAM DIMM based on 32Mx16, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device 2 Fundamental Memory Type ...

Page 7

... Resister Case Temperature Rise from Ambient due to 61 Register Active/Mode Bit(DT Register Active/Mode Bit) 62 SPD Revision 63 Checksum Data 64-71 Manufacturer’s JEDEC ID Code 72 Module Manufacturing Location 73-91 Module Part number 92-255 Reserved Note: 1. NT256T64UH4A1FY-3C 4E54323536543634554834413146592D334320 REV 1.3 08/2006 Serial PD Data Entry SPD Entry Value (Hexadecimal) DDR2-667 DDR2-667 (-3C) 60ns 105ns 8ns ...

Page 8

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Absolute Maximum Ratings Symbol Voltage on I/O pins relative to Vss OUT Voltage on VDD supply relative to Vss V DD Voltage on VDDQ supply relative to Vss V DDQ Storage Humidity (without condensation) H STG Operating Temperature (Ambient Storage Temperature (Plastic) ...

Page 9

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (256MB, 1 Rank, 32x16 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle; address DD0 (MIN) ...

Page 10

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t DQ output access time from CK DQS output access time from CK/ DQSCK t CK high-level width low-level width CL Minimum half clk period for any given cycle ...

Page 11

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t Write recovery time without Auto-Precharge WR WR Write recovery time with Auto-Precharge t Auto precharge write recovery + precharge time ...

Page 12

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (1 Rank, 32Mx16 DDR SDRAMs) # " " ),- . / & REV 1.3 08/2006 # "" # " & NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice !" ...

Page 13

... NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM Revision Log Rev Date 0.1 05/2005 Preliminary Release 1.0 06/2005 Official Release 1.1 11/2005 Update SPD code 1.2 03/2006 Update Package Dimensions. 1.3 08/2006 Update Package Dimensions. REV 1.3 08/2006 Modification 13 NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

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