ild217 Infineon Technologies Corporation, ild217 Datasheet
ild217
Manufacturer Part Number
ild217
Description
Dual Phototransistor Small Outline Surface Mount Optocoupler
Manufacturer
Infineon Technologies Corporation
Datasheet
1.ILD217.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ILD217
Manufacturer:
INFINEON
Quantity:
4 160
Company:
Part Number:
ILD217
Manufacturer:
microsemi
Quantity:
4 200
Company:
Part Number:
ild217A
Manufacturer:
SIEMENS
Quantity:
5 510
Part Number:
ild217T
Manufacturer:
VISHAY/威世
Quantity:
20 000
FEATURES
• Two Channel Coupler
• Industry Standard SOIC-8 Surface Mountable
• Standard Lead Spacing of .05"
• Available in Tape and Reel Option
• Isolation Test Voltage, 2500 VRMS
• High Current Transfer Ratios
• High BVCEO, 70 V
• Compatible with Dual Wave, Vapor Phase and
DESCRIPTION
The ILD205/206/207/211/213/217 are optically
coupled pairs with a gallium arsenide infrared LED
and a silicon NPN phototransistor. Signal informa-
tion, including a DC level, can be transmitted by
the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205/6/7/11/13/17 come in a standard SOIC-8
small outline package for surface mounting which
makes it ideally suited for high density applications
with limited space. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
a higher safety margin compared to the industry
standard of 30 volts.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1 s, 300 pps) .................1 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25 C............................45 mW
Derate Linearly from 25 C......................0.5 mW/ C
Detector
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Collector Breakdown Voltage.................7 V
Power Dissipation per Channel....................55 mW
Derate Linearly from 25 C....................0.55 mW/ C
Package
Total Package Dissipation at 25 C Ambient
Derate Linearly from 25 C......................2.0 mW/ C
Storage Temperature –55 C................... to +150 C
Operating Temperature –55 C ............... to +100 C
Soldering Time at 260 C ............................. 10 sec.
Package
(Conforms to EIA Standard 481-2)
ILD205, 40 – 80%
ILD206, 63 –125%
ILD207, 100 – 200%
ILD211, 20% Minimum
ILD213, 100% Minimum
ILD217, 100% Minimum at 1 mA
IR Reflow Soldering
(2 LEDs + 2 Detectors, 2 Channels).......200 mW
CEO
of 70 volts gives
Characteristics (T
.240
(6.10)
Dimensions in inches (mm)
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
BV
BV
I
Collector-Emitter
Capacitance
Package
DC Current Transfer
Collector-Emitter Saturation
Voltage V
Capacitance, Input to
Output
Isolation Test Voltage
Resistance, Input to Output
Turn-on Time
Turn-off Time
CEO
ILD205
ILD206
ILD207
ILD211
ILD213
ILD205
ILD206
ILD207
ILD217
ILD205/206/207/211/213/217
.120 .002
(3.05 .05)
.004 (.10)
.008 (.20)
CEO
ECO
5–1
CE (sat)
.230 .002
(4.88 .05)
SURFACE MOUNT OPTOCOUPLER
.040 (1.02)
A
=25 C)
.050 (1.27) Typ.
.016 (.41)
C L
Pin 1
Min.
70
7
40
63
100
20
100
13
22
34
100
2500
DUAL PHOTOTRANSISTOR
(3.91 .05)
.154 .002
.020 .004
(.15 .10)
Typ
1.2
0.1
25
5
10
30
45
70
130
0.5
100
5.0
4.0
.015 .002
.008 (.20)
2 Plcs.
(.38 .05)
Cathode
Cathode
Anode
Anode
Max
.
1.55
100
50
80
125
200
0.4
SMALL OUTLINE
1
2
3
4
R.010
(.25) Max.
Unit
V
mA
pF
V
V
nA
pF
%
%
%
%
%
%
%
%
V
pF
VAC
G
5 Max.
s
s
40
7
RMS
.058 .005
(1.49 .13)
AUGUST 1995
Test
Condition
I
V
V
I
I
V
I
V
V
I
I
I
I
I
I
I
I
I
I
I
t=1 min.
I
R
V
Lead
Coplanarity
Max.
(3.18 .13)
F
C
E
F
F
F
F
F
F
F
F
F
F
F
F
C
8
7
6
5
.125 .005
.001 (.04)
R
R
CE
CE
CE
CE
E
=10 mA
=10 mA
=0
=10 mA
=10 mA
=10 mA
=10 mA
=10 mA
=1 mA
=1 mA
=1 mA
=1 mA
=10 mA
=2.5 mA
=10 mA
=2 mA,
=6.0 V
=0
= 100
Collector
Emitter
Collector
Emitter
=10 V
=0
=5 V
=5 V
Related parts for ild217
ild217 Summary of contents
Page 1
... High Current Transfer Ratios ILD205, 40 – 80% ILD206, 63 –125% ILD207, 100 – 200% ILD211, 20% Minimum ILD213, 100% Minimum ILD217, 100% Minimum • High BVCEO • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering DESCRIPTION The ILD205/206/207/211/213/217 are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor ...
Page 2
Figure 1. Forward current versus forward voltage Figure 2. Collector-emitter current versus temperature 1.2 1.0 0.8 0.6 0.4 0.2 If=1ma 0 Vce-Collector to Emitter Voltage (V) Figure 3. Normalized CTRce versus forward current 1.2 CTR ...