ild217 Infineon Technologies Corporation, ild217 Datasheet

no-image

ild217

Manufacturer Part Number
ild217
Description
Dual Phototransistor Small Outline Surface Mount Optocoupler
Manufacturer
Infineon Technologies Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ILD217
Manufacturer:
INFINEON
Quantity:
4 160
Part Number:
ILD217
Manufacturer:
microsemi
Quantity:
4 200
Part Number:
ild2177
Quantity:
148
Part Number:
ild217A
Manufacturer:
SIEMENS
Quantity:
5 510
Part Number:
ild217A
Manufacturer:
TI
Quantity:
5 510
Part Number:
ild217T
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
ild217T
Manufacturer:
VISHAY
Quantity:
1 433
Company:
Part Number:
ild217T
Quantity:
2 000
Company:
Part Number:
ild217T
Quantity:
16 000
Company:
Part Number:
ild217T
Quantity:
30 000
Company:
Part Number:
ild217T
Quantity:
70 000
Company:
Part Number:
ild217T
Quantity:
70 000
FEATURES
• Two Channel Coupler
• Industry Standard SOIC-8 Surface Mountable
• Standard Lead Spacing of .05"
• Available in Tape and Reel Option
• Isolation Test Voltage, 2500 VRMS
• High Current Transfer Ratios
• High BVCEO, 70 V
• Compatible with Dual Wave, Vapor Phase and
DESCRIPTION
The ILD205/206/207/211/213/217 are optically
coupled pairs with a gallium arsenide infrared LED
and a silicon NPN phototransistor. Signal informa-
tion, including a DC level, can be transmitted by
the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205/6/7/11/13/17 come in a standard SOIC-8
small outline package for surface mounting which
makes it ideally suited for high density applications
with limited space. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
a higher safety margin compared to the industry
standard of 30 volts.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1 s, 300 pps) .................1 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25 C............................45 mW
Derate Linearly from 25 C......................0.5 mW/ C
Detector
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Collector Breakdown Voltage.................7 V
Power Dissipation per Channel....................55 mW
Derate Linearly from 25 C....................0.55 mW/ C
Package
Total Package Dissipation at 25 C Ambient
Derate Linearly from 25 C......................2.0 mW/ C
Storage Temperature –55 C................... to +150 C
Operating Temperature –55 C ............... to +100 C
Soldering Time at 260 C ............................. 10 sec.
Package
(Conforms to EIA Standard 481-2)
ILD205, 40 – 80%
ILD206, 63 –125%
ILD207, 100 – 200%
ILD211, 20% Minimum
ILD213, 100% Minimum
ILD217, 100% Minimum at 1 mA
IR Reflow Soldering
(2 LEDs + 2 Detectors, 2 Channels).......200 mW
CEO
of 70 volts gives
Characteristics (T
.240
(6.10)
Dimensions in inches (mm)
Parameter
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
BV
BV
I
Collector-Emitter
Capacitance
Package
DC Current Transfer
Collector-Emitter Saturation
Voltage V
Capacitance, Input to
Output
Isolation Test Voltage
Resistance, Input to Output
Turn-on Time
Turn-off Time
CEO
ILD205
ILD206
ILD207
ILD211
ILD213
ILD205
ILD206
ILD207
ILD217
ILD205/206/207/211/213/217
.120 .002
(3.05 .05)
.004 (.10)
.008 (.20)
CEO
ECO
5–1
CE (sat)
.230 .002
(4.88 .05)
SURFACE MOUNT OPTOCOUPLER
.040 (1.02)
A
=25 C)
.050 (1.27) Typ.
.016 (.41)
C L
Pin 1
Min.
70
7
40
63
100
20
100
13
22
34
100
2500
DUAL PHOTOTRANSISTOR
(3.91 .05)
.154 .002
.020 .004
(.15 .10)
Typ
1.2
0.1
25
5
10
30
45
70
130
0.5
100
5.0
4.0
.015 .002
.008 (.20)
2 Plcs.
(.38 .05)
Cathode
Cathode
Anode
Anode
Max
.
1.55
100
50
80
125
200
0.4
SMALL OUTLINE
1
2
3
4
R.010
(.25) Max.
Unit
V
mA
pF
V
V
nA
pF
%
%
%
%
%
%
%
%
V
pF
VAC
G
5 Max.
s
s
40
7
RMS
.058 .005
(1.49 .13)
AUGUST 1995
Test
Condition
I
V
V
I
I
V
I
V
V
I
I
I
I
I
I
I
I
I
I
I
t=1 min.
I
R
V
Lead
Coplanarity
Max.
(3.18 .13)
F
C
E
F
F
F
F
F
F
F
F
F
F
F
F
C
8
7
6
5
.125 .005
.001 (.04)
R
R
CE
CE
CE
CE
E
=10 mA
=10 mA
=0
=10 mA
=10 mA
=10 mA
=10 mA
=10 mA
=1 mA
=1 mA
=1 mA
=1 mA
=10 mA
=2.5 mA
=10 mA
=2 mA,
=6.0 V
=0
= 100
Collector
Emitter
Collector
Emitter
=10 V
=0
=5 V
=5 V

Related parts for ild217

ild217 Summary of contents

Page 1

... High Current Transfer Ratios ILD205, 40 – 80% ILD206, 63 –125% ILD207, 100 – 200% ILD211, 20% Minimum ILD213, 100% Minimum ILD217, 100% Minimum • High BVCEO • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering DESCRIPTION The ILD205/206/207/211/213/217 are optically coupled pairs with a gallium arsenide infrared LED and a silicon NPN phototransistor ...

Page 2

Figure 1. Forward current versus forward voltage Figure 2. Collector-emitter current versus temperature 1.2 1.0 0.8 0.6 0.4 0.2 If=1ma 0 Vce-Collector to Emitter Voltage (V) Figure 3. Normalized CTRce versus forward current 1.2 CTR ...

Related keywords