mhw2821-1 Freescale Semiconductor, Inc, mhw2821-1 Datasheet

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mhw2821-1

Manufacturer Part Number
mhw2821-1
Description
Uhf Silicon Fet Power Amplifiers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET Power
Amplifiers
commercial FM equipment operating from 806 to 950 MHz.
©
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(1) Adjust P in for specified P out .
MOTOROLA RF DEVICE DATA
DC Supply Voltages
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Frequency Range
Input Power (P out = 20 W) (1)
Input Power
Power Gain (P out = 20 W) (1)
Power Gain
Efficiency (Rated P out )
Harmonics (Rated P out Reference) (1)
Input VSWR (Rated P out ) (1)
Designed for 12.5 volt UHF power amplifier applications in industrial and
Motorola, Inc. 1996
Specified 12.5 Volt Characteristics:
LDMOS FET Technology
Epoxy Glass Substrate Eliminates Possibility of Substrate Fracture
50
Guaranteed Stability and Ruggedness
Cost Effective
RF Input Power:
RF Input Power:
RF Output Power: 20 W (MHW2821–1)
RF Output Power:
Input/Output Impedance
(P out = 18 W) (1)
(P out = 18 W) (1)
(Flange Temperature = 25 C)
250 mW (MHW2821–1)
300 mW (MHW2821–2)
18 W (MHW2821–2)
Characteristic
Rating
(V S2 = V S3 = 12.5 Vdc; V bias = 12.5 Vdc; T C = + 25 C, 50
MHW2821–1
MHW2821–2
MHW2821–1
MHW2821–2
MHW2821–1
MHW2821–2
V S2 , V S3
VSWR in
Symbol
Symbol
V bias ,
P out
T stg
BW
P in
P in
G P
T C
2f o
3f o
MHW2821-1
MHW2821-2
RF POWER AMPLIFIER
–1: 20 W, 806 – 870 MHz
–2: 18 W, 890 – 950 MHz
CASE 301AB–02, STYLE 1
system, unless otherwise noted)
17.9
Min
806
890
MHW2821–1 MHW2821–2
19
35
– 30 to +100
– 30 to +100
Value
12.5
400
16
23
Order this document
Max
– 40
– 45
870
950
250
300
3:1
by MHW2821/D
(continued)
Unit
Unit
MHz
mW
mW
Vdc
dBc
dB
dB
W
%
C
C
1

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mhw2821-1 Summary of contents

Page 1

... MHW2821– MHW2821–2 MHW2821– MHW2821– VSWR in Order this document by MHW2821/D MHW2821-1 MHW2821-2 – 806 – 870 MHz – 890 – 950 MHz RF POWER AMPLIFIER CASE 301AB–02, STYLE 1 Value Unit 12.5 Vdc 16 400 ...

Page 2

... Characteristic Load Mismatch Stress (V supply = 16 Vdc; P out = 20 W for MHW2821–1; P out = 18 W for MHW2821–2; Load VSWR = 20:1, All Phase Angles at Frequency of Test) (1) Stability (V supply = 10 Vdc 250 mW for MHW2821– 300 mW for MHW2821–2; Load VSWR = 4:1, ...

Page 3

... TYPICAL CHARACTERISTICS (MHW2821–1) 200 P out = 20 W 180 12.5 Vdc 160 140 120 100 80 Input VSWR (mW) 0 800 812.5 825 837.5 850 f, FREQUENCY (MHz) Figure 2. Input Power, Efficiency and VSWR versus Frequency 12.5 Vdc set for P out = ...

Page 4

... TYPICAL CHARACTERISTICS (MHW2821–2) 200 P out = 18 W 180 12.5 Vdc 160 140 Input VSWR:1 120 100 (mW 890 900 910 920 930 940 f, FREQUENCY (MHz) Figure VSWR, and Efficiency versus Frequency 12.5 Vdc P in set for P out = ...

Page 5

... BSC 6.48 BSC N 0.955 BSC 24.26 BSC P 0.008 0.012 0.20 0.31 Q 0.151 0.161 3.84 4.09 R 0.685 0.705 17.40 17.91 S 0.598 0.612 15.19 15.55 V 0.155 BSC 3.94 BSC W 0.355 BSC 9.02 BSC Y 0.210 REF 5.33 REF STYLE 1: PIN 1. RF INPUT 2. +DC (BIAS) 3. +DC (SUPPLY) 4. +DC (SUPPLY OUTPUT CASE: GROUND MHW2821–1 MHW2821–2 5 ...

Page 6

... P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com ◊ MHW2821–1 MHW2821–2 6 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd. ...

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