upc8211tk-e2 Renesas Electronics Corporation., upc8211tk-e2 Datasheet - Page 4

• Manufacturer Part Number: upc8211tk-e2
• Description: Necs Sige Low Noise Amplifier For Gps/mo Bile Communications
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
otherwise specified)
TEST CIRCUIT
High : ON
Low : OFF (Power-Save)
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
4
C
C
C
C
R
L
L
L
Circuit Current
Power Gain
Noise Figure
Input 3rd Order Distortion Intercept
Point
Input Return Loss
Output Return Loss
Isolation
Rising Voltage From Power-Saving
Mode
Falling Voltage From Power-Saving
Mode
Gain Flatness
Gain 1 dB Compression Output
Power
Output Power
1
2
3
1
2
3
5
1
, C
Symbol
4
Parameter
IN
Chip Capacitor
Chip Capacitor
Chip Capacitor
Chip Capacitor
Resistor
Inductor
Inductor
Inductor
Form
33 pF
C3
C2
V
PS
C1
1.3 pF
4.7 nH
Symbol
P
L1
RL
V
V
RL
Flat
O (1 dB)
IIP
ISL
NF
I
G
P
0.1 F
PSon
PSoff
CC
O
P
Rating
0.1
4.7 nH
8.2 nH
out
1.3 pF
750 Ω
33 pF
82 pF
22 nH
in
3
µ
µ
F
No Signal
At Power-Saving Mode
f
P
1
2
3
Data Sheet PU10426EJ04V0DS
A
RF
in
= +25°C, V
= ± 2.5 MHz
= −10 dBm
Test Conditions
TFL0816 or TFL0510
Part Number
CC
TFL0510
TFL0510
RR0816
GRM36
GRM36
GRM36
GRM36
= 3.0 V, V
6
5
4
750 Ω
R1
PS
= 3.0 V, f
0.1 F
MIN.
15.5
−1.5
C4
2.5
6.0
2.2
10
−
−
−
−
−
−
−
µ
22 nH
Susumu
Susumu
Susumu
Susumu
Murata
Murata
Murata
Murata
8.2 nH
Maker
L2
L3
in
TYP.
18.5
14.5
33.5
−6.0
+2.0
−12
= 1 575 MHz, unless
3.5
1.3
7.5
−
−
−
−
V
82 pF
C5
CC
MAX.
21.5
µ
4.5
1.5
0.8
0.5
1
−
−
−
−
−
−
−
PC8211TK
OUT
dBm
dBm
dBm
Unit
mA
µ
dB
dB
dB
dB
dB
dB
V
V
A