mt46v128m8p-6t Micron Semiconductor Products, mt46v128m8p-6t Datasheet - Page 65
mt46v128m8p-6t
Manufacturer Part Number
mt46v128m8p-6t
Description
1gb Ddr Sdram Component
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46V128M8P-6T.pdf
(82 pages)
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Figure 36:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
65
NOP
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
T2n
1Gb: x4, x8, x16 DDR SDRAM
NOP
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
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