ne552r479a-t1a Renesas Electronics Corporation., ne552r479a-t1a Datasheet

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ne552r479a-t1a

Manufacturer Part Number
ne552r479a-t1a
Description
3.0 V Operation Silicon Rf Power Ldmos Fet For 2.45 Ghz 0.4 W Transmission Amplifiers
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
ne552r479a-t1a-A
Manufacturer:
EPSON
Quantity:
12 000
Document No. PU10124EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology (our
WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 26.0 dBm
output power with 45% power added efficiency at 2.45 GHz under the 3.0 V supply voltage.
FEATURES
• High output power
• High power added efficiency : η
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• Digital cellular phones
• Analog cellular phones
• Bluetooth
• Others
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE552R479A-T1
NE552R479A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
TM
Part number for sample order: NE552R479A
applications
3.0 V OPERATION SILICON RF POWER LDMOS FET
FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
: 3.0 V GSM1900 Pre Driver
: 2.8 V AMPS Handsets
: 3.0 V Class 1 Devices
: 3.0 V Two-Way Pagers
Package
79A
: P
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
add
out
DS
L
= 11 dB TYP. (V
= 26.0 dBm TYP. (V
= 2.8 to 6.0 V
= 45% TYP. (V
The mark
DATA SHEET
Marking
shows major revised points.
AW
DS
DS
= 3.0 V, I
= 3.0 V, I
DS
= 3.0 V, I
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Dset
Dset
= 200 mA, f = 2.45 GHz, P
= 200 mA, f = 2.45 GHz, P
Dset
SILICON POWER MOS FET
= 200 mA, f = 2.45 GHz, P
NE552R479A
Supplying Form
   
NEC Compound Semiconductor Devices 2001, 2003
in
in
= 19 dBm)
= 10 dBm)
in
= 19 dBm)

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ne552r479a-t1a Summary of contents

Page 1

... Part Number Package NE552R479A-T1 79A NE552R479A-T1A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE552R479A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

... 100 µ DSS DSS f = 2.45 GHz 3.0 V, out dBm 200 mA (RF OFF), Note1 add Dset L Data Sheet PU10124EJ03V0DS NE552R479A MIN. TYP. MAX. Unit 2.8 3.0 6 2.0 3.0 V − 200 500 dBm MIN. TYP. MAX. Unit − ...

Page 3

... GHz dBm in 1 000 25 100 750 20 75 500 250 Gate to Source Voltage V Data Sheet PU10124EJ03V0DS NE552R479A 1 250 P out 1 000 100 750 75 η d η add 500 50 250 ( ...

Page 4

... URL http://www.csd-nec.com/ LARGE SIGNAL IMPEDANCE ( (GHz) Z (Ω 2.96 −j7.78 3.36 −j8.42 2.45 Note Z is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency 3 200 mA 2.45 GHz Note (Ω) OL Data Sheet PU10124EJ03V0DS NE552R479A = 400 mW) out ...

Page 5

... EVALUATION BOARD FOR 2.45 GHz Symbol Circuit Board 32.0 Value Comment 2.0 pF 1.4 pF 2.2 pF 0 000 pF 0.22 µ F 3.3 µ 16V 1 000 Ω 0.4 mm, ε 4.5 R4775 Data Sheet PU10124EJ03V0DS NE552R479A Unit : 30 ...

Page 6

... MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 6 (Bottom View) 1.5±0.2 Source Drain Gate 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain φ Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10124EJ03V0DS NE552R479A Drain 0.8 MAX. ...

Page 7

... Data Sheet PU10124EJ03V0DS NE552R479A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 7 ...

Page 8

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 8 Please check with an NEC sales representative for Data Sheet PU10124EJ03V0DS NE552R479A The M8E 00 0110 ...

Page 9

... Taipei Branch Office TEL: +886-2-8712-0478 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.csd-nec.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE552R479A 0306 ...

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